Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 9 N 3

Landau parameter of elasticity
N. Merabtine, Z. Bousnane, M. Benslama, F. Boussaad
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 001-003.
Abstract | Full text (PDF)

Microacoustic evaluation of elastic parameters of highly porous silicon layers
A. Doghmane, Z. Hadjoub, M. Doghmane, F. Hadjoub
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 004-011.
Abstract | Full text (PDF)

Polyassociative thermodynamic model of A2B6 semiconductor meltand phase equilibria in Cd-Hg-Te system. p-T-x diagram of Cd-Hg-Te system
P.P. Moskvin, V.V. Khodakovsky, L.V. Rashkovets’kyi
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 012-016.
Abstract | Full text (PDF)

Investigation on the bandgap of semiconductor solid solution Hg1-x-y-zCdxMnyZnzTe
V.V. Zhikharevich, S.E. Ostapov, V.G. Deibuk
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 017-021.
Abstract | Full text (PDF)

Study of the absorption band in the range 0.3-0.9 eV inherent to solid solutions p-Ge1-xSix irradiated by fast electrons at the temperature 77 K
Sh.M. Abbasov, Y.T. Agaverdiyeva, T.I. Kerimova
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 022-024.
Abstract | Full text (PDF)

Photoelectric properties of single crystals Ag3In5Se9
A.H. Huseynov, R.M. Mamedov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 025-028.
Abstract | Full text (PDF)

The influence of surface defects on the pinhole formation in silicide thin film
I.V. Belousov, A.N. Grib, G.V. Kuznetsov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 029-034.
Abstract | Full text (PDF)

Determination of potential distribution in a three-barrier structure
D.M. Yodgorova, L.X. Zoirova, A.V.Karimov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 035-039.
Abstract | Full text (PDF)

Estimation of frequency characteristics of photodiode determined by motion of charge carriers in the space-charge region
A.I. Danilyuk, Yu.G. Dobrovolskiy
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 040-043.
Abstract | Full text (PDF)

Active inductances controlled in GaAs MESFET technology
M.S. Benbouza, C. Kenzai-Azizi, N. Merabtine, Y. Saidi, S. Amourache
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 044-048.
Abstract | Full text (PDF)

Electromagnetic resonance absorption in metallic gratings
V.M. Fitio, H.P. Laba, Y.V. Bobitski
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 049-055.
Abstract | Full text (PDF)

Holographic interferometry under phase distortions
L.A. Derzhypolska, O.V. Gnatovskiy
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 056-059.
Abstract | Full text (PDF)

Disappearance of aligning properties of deposited SiOx films as caused by external factors
Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 060-065.
Abstract | Full text (PDF)

Ultra-high field transport in GaN-based heterostructures
S.A. Vitusevich, S.V. Danylyuk, B.A. Danilchenko, N. Klein, S.E. Zelenskyi, E. Drok, A.Yu. Avksentyev, V.N. Sokolov, V.A. Kochelap, A.E. Belyaev, M.V. Petrychuk, H. Luth
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 066-069.
Abstract | Full text (PDF)

Spin-dependent transport in magnetic sandwiches in the effective-mass approximation
V.F. Los’, V.N. Saltanov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 070-078.
Abstract | Full text (PDF)

Growing the epitaxial undoped and N-doped ZnO films by radical beam gettering epitaxy
I.V. Rogozin
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 079-082.
Abstract | Full text (PDF)

Simulation of multiwave pumped fiber Raman amplifiers
G.S. Felinskyi, P.A. Korotkov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 083-093.
Abstract | Full text (PDF)

Defects with deep donor and acceptor levels in nanocrystals of CdTe and CdSe
V.N. Babentsov
Semiconductor physics, quantum electronics and optoelectronics. 2006. V.9, N.3. P. 094-098.
Abstract | Full text (PDF)