References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (3) P. 022-024 (2006).
DOI: https://doi.org/10.15407/spqeo9.03.022

References

1. A.R. Basman, A.B. Gerasimov, M.K. Gogotishvili, N.D. Dolidze, N.G. Kakhudze, B.M. Kovalenko, Effect of donor impurities on kinetics of radiation defects of annealing in germanium // Fizika i tekhnika poluprovod. (7), p. 1377-1381 (1973) (in Russian).

2. A.B. Gerasimov, N.D. Dolidze, E.M. Kovalenko, M.G. Mtskhvetadze, Study of absorption band in the range 0.52 eV in germanium irradiated by fast electrons at the temperature 77 K // Ibid.2(7), p. 1349-1352 (1977).

3. A.B. Gerasimov, N.D. Dolidze, B.M. Kovalenko, N.V. Chelidze, Effect oflight on low temperature annealing of defects in germanium // Ibid. 1(7), p. 982-985 (1967).

4. Sh.M. Abbasov, K.R. Allakverdiyev, G.T. Agaverdiyeva, N.A. Bakhishov, A.I. Nagiyev, Study of absorption band in the region 0.52 eV in n-Ge1-xSix solid solution irradiated by fast electrons at the temperature 77 K // Ibid.21(12), p. 2235-2238 (1987).

5. H.J. Stein, Trapping of positrons by radiation induced defects in Ge. In: Rad. Dan. Def. Semicond. Conf. Ser. No 16, London-Bristol, p. 315 (1973).

6. V.S. Vavilov, N.A. Ukhin, Radiation defects in semiconductors and semiconductor devices. Atomizdat, Moscow, 1969 (in Russian).

7. L.I. Cheng, I.C. Corelli, I.W. Corbett and G.D. Watikins, 1.8-3.3 and 3.9 μm bands in irradiated silicon correlations with the divacancy // Phys. Rev. 152, p. 761 (1966). https://doi.org/10.1103/PhysRev.152.761

8. D.M. Warschauer, D.C. Reynolds, Mechanically excited emission in cadmium sulfide // J. Phys. and Chem. Solids 163, No 3-4, p. 251 (1960). https://doi.org/10.1016/0022-3697(60)90008-1

9. A.R. Basman, A.B. Gerasimov, N.D. Dolidze, N.G. Kakhudze, B.M. Kovalenko, A.A. Tserwadze, On model of quasi-stable light sensitive defects in Ge irradiated at 77 K // Fizika I tekhnika poluprov. 7(7), p. 1347-1381 (1973) (in Russian).

10. Sh.M. Abbasov, V.S. Mamedov, V.I. Shakhovtsov, G.M. Gasumov, L.I. Zagaynova, Intrinsic and lattice absorption in Ge-Si solid solutions at temperature 4.2 K // Doklady AN Azerb. SSR 36, No 6, p. 33-36 (1980) (in Russian).