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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 022-024.
Study of the absorption band in the range 0.3-0.9 eV
inherent to solid solutions p-Ge1−xSix irradiated
by fast electrons at the temperature 77 K
Institute of Radiation Problems, Azerbaijan NAS
Phone: (+99412) 393-391; fax: (+99412) 398-318
E-mail: sh_abbasov@rambler.ru
Abstract. Ge1−xSix solid solutions are one of promissing materials for semiconductor
technique. However, their electrical and optical properties, especially with silicon content
more than 5 at. % have been little studied. In particular, in the number of works [1-3]
there have been presented the experimental results of study in the region 0.52 eV in
germanium irradiated by fast electrons, gamma-rays and protons at the temperature of
liquid nitrogen. In the literature, however, there are no data on studying the absorption
band in the range 0.52 eV in Ge1−xSix solid solution irradiated by fast electrons.
Keywords: germanium-silicon alloy, optical absorption, energy of electrons, divacancy.
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