|
Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 029-034.
The influence of surface defects on the pinhole formation in silicide thin film
1Taras Shevchenko Kyiv National University, 64, Volodymyrska str., 01033 Kyiv, Ukraine
Abstract. The growth of the CoSi layer was considered within the framework of the
grain boundary diffusion model. The time dependences of the temperature due to the
exothermic reaction of silicide formation as well as the dependences of the CoSi layer
thickness were calculated for various values of the reaction activation energy. It was
shown that the heat release at high reaction velocities can lead to the considerable
increase of the temperature up to melting of the silicide and covering Co layers. The
model of pinhole formation in cobalt silicide films was proposed on the basis of local
melting in the reaction area at crystal defects of the silicon surface.
Keywords: formation of silicide, activation energy, zone of reacting, local melting,
defects on surface.
| ||