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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 035-039.
Determination of potential distribution in a three-barrier structure
Physical-Technical Institute of the Scientific Association "Physics-Sun" of the Academy of Sciences of the Republic of
Uzbekistan, Mavlanov str., 2B, 700084, Tashkent
Phone: +998-71-1331271, fax: +998-71-1354291; e-mail: karimov@uzsci.net
Abstract. Model m1-p-n-m2 structures with three barriers were considered; construction
and technology of manufacturing the three-barrier m1-pAlGaInAs-nGaAs-m2 structure
are presented. Experimental methods to determine voltages across every junction of the
three-barrier structure were proposed. The mechanism of current transport when
changing the blocked p-n junctions and Schottky barriers were explained. It was shown
that, at both polarities of operating regime, current characteristics are determined by
blocked junctions. The obtained results are of interest for research of properties of threebarrier and similar phototransistor structures in response to external influences.
Keywords: three-barrier structure, metal-semiconductor, p-n junction.
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