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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 060-065.
Disappearance of aligning properties of deposited SiOx films
as caused by external factors
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38 (044) 525-31-26
E-mail: kolomzarov@yahoo.com; zelinski@isp.kiev.ua
Abstract. Thermal and degradation stability of SiOx aligning films deposited by cathode
reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that
a heat treatment and other external factors initiate transformations on the surface of
aligning film and provided new conditions at the interface. This leads to a change of
slight axis orientation direction of LC molecules and appearance of various defects in the
LC aligned structures. The technological ways to increase the aligning layer durability
under influence of external factors were proposed.
Keywords: liquid crystal, molecular orientation, cathode reactive sputtering, aligned
structures.
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