Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 060-065.
https://doi.org/10.15407/spqeo9.03.060


Disappearance of aligning properties of deposited SiOx films as caused by external factors
Yu. Kolomzarov, P. Oleksenko, V. Sorokin, P. Tytarenko, R. Zelinskyy

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38 (044) 525-31-26 E-mail: kolomzarov@yahoo.com; zelinski@isp.kiev.ua

Abstract. Thermal and degradation stability of SiOx aligning films deposited by cathode reactive sputtering (CRS) in glow discharge plasma were investigated. It was shown that a heat treatment and other external factors initiate transformations on the surface of aligning film and provided new conditions at the interface. This leads to a change of slight axis orientation direction of LC molecules and appearance of various defects in the LC aligned structures. The technological ways to increase the aligning layer durability under influence of external factors were proposed.

Keywords: liquid crystal, molecular orientation, cathode reactive sputtering, aligned structures.

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