Semiconductor Physics, Quantum Electronics and Optoelectronics, 9 (3) P. 066-069 (2006).
DOI: https://doi.org/10.15407/spqeo9.03.066


References

1. E.A. Barry, K.W. Kim, V.A. Kochelap, Hot electrons in group-III nitrides at moderate electric fields // Appl. Phys. Lett. 80(13), p. 2317-9 (2002).
https://doi.org/10.1063/1.1464666
2. Sh. Kogan, Electronic noise and fluctuations in solids. Cambridge University Press, Cambridge, UK, 1996.
https://doi.org/10.1017/CBO9780511551666
3. F.N. Hooge, T.G.M. Kleinpenning, L.K.J. Vandamme, Experimental studies on 1/f noise // Repts Progr. Phys. 44(5) p. 479-532 (1981).
https://doi.org/10.1088/0034-4885/44/5/001
4. S.A. Vitusevich, S.V. Danylyuk, N. Klein et al., Separation of hot-electron and self-heating effects in two-dimensional AlGaN/GaN-based conducting channels // Appl. Phys. Lett. 82(3), p. 748-750 (2003).
https://doi.org/10.1063/1.1542928
5. D.C. Look, D.C. Reynolds, W. Kim, O. Aktas, A. Botchkarev, A. Salvador, and H. Morkoc, Deep-center hopping conduction in GaN // J. Appl. Phys.80(5), p. 2960-2963 (1996)
https://doi.org/10.1063/1.363128
6. P. Tripathi, B.K. Ridley, Dynamics of hot-electron scattering in GaN heterostructures // Phys. Rev. B 66(19), 195301-10 (2002).
https://doi.org/10.1103/PhysRevB.66.195301
7. N.M. Stanton, P. Hawker, A.J. Kent, T.S. Cheng, and C.T. Foxon, Hot electron energy relaxation in gallium nitride // Phys. status solidi(a) 176(1), p. 369-372 (1999).
https://doi.org/10.1002/(SICI)1521-396X(199911)176:1<369::AID-PSSA369>3.0.CO;2-Z
8. A. Matulionis, J. Liberis, I. Matulioniene etal., Hot-phonon temperature and lifetime in a biased AlxGa1-xN/GaN channel estimated from noise analysis // Phys. Rev. B 68(30) 035338-1-7 (2003) .
https://doi.org/10.1103/PhysRevB.68.035338