Semiconductor Physics, Quantum Electronics & Optoelectronics. 2006. V. 9, N 3. P. 066-069.
https://doi.org/10.15407/spqeo9.03.066

Ultra-high field transport in GaN-based heterostructures
S.A. Vitusevich1,*, S.V. Danylyuk1, B.A. Danilchenko2, N. Klein1, S.E. Zelenskyi2, E. Drok2,A.Yu. Avksentyev3, V.N. Sokolov3, V.A. Kochelap3, A.E. Belyaev3, M.V. Petrychuk1, H. Luth1

1Institut für Schichten und Grenzflächen and CNI - Center of Nanoelectronic Systems for Information Technology, Forschungszentrum Jülich, Jülich D-52425, Germany
2Institute of Physics, NAS of Ukraine, 03028 Kyiv, Ukraine 3V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 03028 Kyiv, Ukraine
*Corresponding author: phone: +49-2461-612345; fax: +49-2461-612470 E-mail address: s.vitusevich@fz-juelich.de

Abstract. This paper describes measurements of the velocity of electrons at electric fields up to 100 kV/cm in GaN/AlGaN heterostructures. In order to avoid the Joule heating effect, a pulse technique with a time sweep of 10-30 ns was used. The experimental results indicate that overheating of the 2DEG does not exceed 1000 K in this electric field range and drift velocity as high as ~107 cm/s was obtained. Additionally, the low frequency 1/f noise spectra measured for a different bias voltage are analyzed with respect to field-induced contribution of hopping conductivity in AlGaN barrier region.

Keywords: HEMT, TLM, 2DEG, hot electrons, 1/f noise.

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