Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (3) P. 001-005 (2007).
DOI:
https://doi.org/10.15407/spqeo10.03.001
References
1. M.S. Shur // Solid-State Electronics 42, p. 2131 (1998). https://doi.org/10.1016/S0038-1101(98)00208-1 | | 2. H. Morkoç, Nitride Semiconductors and Devices. Springer, Berlin, 1999. https://doi.org/10.1007/978-3-642-58562-3 | | 3. Yu.G. Shreter, Yu.T. Rebane, V.A. Zykov, V.G. Sidorov, Wide-Gap Semiconductors. Nauka, St.-Petersburg, 2001 (in Russian). | | 4. V.P. Klad'ko, S.V. Chornen'kii, A.V. Naumov et al. // Fiz. Tekhn. Poluprovodn. 40, p. 1087 (2006) (in Russian) | | Semiconductors 40, p. 1060 (2006). | | 5. V.V. Evstropov, Yu.V. Zhilyaev, N. Nazarov et al. // Fiz. Tekhn. Poluprovodn. 27, p. 1319 (1993) (in Russian) | | Semiconductors 27, p. 729 (1993). https://doi.org/10.1177/0038038593027004034 | | 6. V.V. Evstropov, Yu.V. Zhilyaev, N. Nazarov et al. // Fiz. Tekhn. Poluprovodn. 29, p. 385 (1995) (in Russian) | | Semiconductors 29, p. 195 (1995). https://doi.org/10.1016/0164-1212(95)90002-0 | | 7. V.V. Evstropov, Yu.V. Zhilyaev, M. Dzhumaeva et al. // Fiz. Tekhn. Poluprovodn. 31, p. 152 (1997) (in Russian) https://doi.org/10.1134/1.1187092 | | Semiconductors 31, p. 115 (1997). https://doi.org/10.1134/1.1187092 | | 8. V.V. Evstropov, M. Dzhumaeva, Yu.V. Zhilyaev et al. // Fiz. Tekhn. Poluprovodn. 34, p. 1357 (2000) (in Russian) | | Semiconductors 34, p. 1305 (2000). https://doi.org/10.1134/1.1325428 | | 9. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov et al. // Pis'ma v ZhTF 31, p. 88 (2005) (in Russian) https://doi.org/10.1134/1.2150904 | | Techn. Phys. Lett. 31, no 12, p. 1078 (2005). https://doi.org/10.1134/1.2150904 | | 10. Semiconductor Materials GaN, AlN, InN, BN, SiC. M.E. Levinstein, S.L. Rumyantsev, M.S. Shur (Eds.). Wiley, New York, 2001. | | 11. S.M. Sze, Physics of Semiconductor Devices. Wiley, New York, 1981. | | 12. Tunneling Phenomena in Solids, S. Burstein and S. Lundqvist (Eds.). Plenum, New York, 1969. | | 13. A.E. Belyaev, N.S. Boltovets, V.N. Ivanov et al. Heat-resistant Au−TiB−n-GaN Schottky diodes // Proc. 16th Intern. Crimean Conf. "Microwave & Telecommunication Technology", 2006, Sevastopol, Weber (2006), p. 644. https://doi.org/10.1109/CRMICO.2006.256141 | |
|
|