Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 001-005.

On the tunnel mechanism of current flow in Au−TiBx−n-GaN−i-Al2O3 Schottky barrier diodes
A.E. Belyaev1, N.S. Boltovets2, V.N. Ivanov2, V.P. Klad’ko1, R.V. Konakova1, Ya.Ya. Kudryk1, A.V. Kuchuk1, V.V. Milenin1, Yu.N. Sveshnikov3, V.N. Sheremet1

1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +380-44-525-61-82; e-mail:
2State Enterprise Research Institute “Orion”, 8a, Eugene Pottier str., 03057 Kyiv, Ukraine Phone: +380-44-456-05-48; e-mail:
3Closed Corporation “Elma-Malakhit”, Zelenograd, Russia E-mail:

Abstract. We investigated a current flow mechanism in the Au−TiB x−n-GaN−i-Al 2 O 3 Schottky barrier diodes, in which the space-charge region width is much over the de Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V curves of forward-biased Schottky barriers showed that, in the temperature range 80−380 K, the current flow occurs as a tunneling one along dislocations crossing the space-charge region. The dislocation density ρ estimated from the I−V curves (in accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10 7 cm −2 . This value is close to that obtained with x-ray diffraction technique.

Keywords: gallium nitride, Schottky barrier, tunnel current, dislocation density.

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