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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 001-005.
On the tunnel mechanism of current flow
in Au−TiBx−n-GaN−i-Al2O3 Schottky barrier diodes
1V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +380-44-525-61-82; e-mail: konakova@isp.kiev.ua
Abstract. We investigated a current flow mechanism in the Au−TiB x−n-GaN−i-Al 2 O 3
Schottky barrier diodes, in which the space-charge region width is much over the de
Broglie wavelength in GaN. An analysis of the temperature dependences of the I−V
curves of forward-biased Schottky barriers showed that, in the temperature range
80−380 K, the current flow occurs as a tunneling one along dislocations crossing the
space-charge region. The dislocation density ρ estimated from the I−V curves (in
accordance with the model of tunneling along the dislocation line) was ≈ 1.7×10 7 cm −2 .
This value is close to that obtained with x-ray diffraction technique.
Keywords: gallium nitride, Schottky barrier, tunnel current, dislocation density.
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