Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (3) P. 044-047 (2007).
DOI: https://doi.org/10.15407/spqeo10.03.044

References

1. Yu.M. Shwarts, V.L. Borblik, N.R. Kulish, V.N. Sokolov, M.M. Shwarts, E.F. Venger, Silicon diode temperature sensor without a kink of the response curve in cryogenic temperature region // Sensors and Actuators, A 76(1-3), p. 107-111 (1999).
https://doi.org/10.1016/S0924-4247(98)00361-6
2. J.A. Del Alamo and R.M. Swanson, Forward-bias tunneling: a limitation to bipolar device scaling // IEEE Electron Device Lett. EDL-7 (11), p. 629-631 (1986).
https://doi.org/10.1109/EDL.1986.26499
3. V.L. Borblik, Yu.M. Shwarts, and M.M. Shwarts, Revealing the hopping mechanism of conduction in heavily doped silicon diodes // Semiconductor Physics, Quantum Electronics & Optoelectronics 8(2), p. 41-44 (2005).
https://doi.org/10.15407/spqeo8.02.041
4. B.I. Shklovskii, Hopping conduction of heavily doped semiconductors // Sov. Phys.-Semicond. 7 (1), p. 77-83 (1973) [Fiz. Tekh. Poluprov. 7(1), p. 112-118 (1973) (in Russian)].
5. S.M. Sze, Physics of Semiconductor Devices. Wiley, New York, 1981.
6. N.F. Mott, E.A. Davis, Electron Processes in NonCrystalline Materials. Clarendon Press, Oxford, 1979.
7. D.N. Tsigankov and A.L. Efros, Variable range hopping in two-dimensional systems of interacting electrons // Phys. Rev. Lett. 88 (17), p. 176602/1-4 (2002).
https://doi.org/10.1103/PhysRevLett.88.176602
8. B.I. Shklovskii and А.L. Efros, Completely compensated crystalline semiconductor as a model of an amorphous semiconductor // Sov. Phys.-JETP 35(3), p. 610-618 (1972) [Zh. Eksp. Teor. Fiz. 62(3), p. 1156-1165 (1972) (in Russian)].
9. M. Pollak and J.J. Hauser, Note on the anisotropy of the conductivity in thin amorphous films // Phys. Rev. Lett. 31(21), p. 1304-1307 (1973).
https://doi.org/10.1103/PhysRevLett.31.1304
10. R. Meservey, P.M. Tedrow, and J.S. Brooks, Tunneling characteristics of amorphous Si barriers // J. Appl. Phys. 53(3), p. 1563-1570 (1982).
https://doi.org/10.1063/1.330658
11. A.K. Raychaudhuri, S. Kar, and A. Ghosh, Suppression of universal conductance fluctuations by an electric field in doped Si(P,B) near the metalinsulator transition // Physica E 18(1-3), p. 284-285 (2003).
https://doi.org/10.1016/S1386-9477(02)01019-6