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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 044-047.
Characteristics of diode temperature sensors
which exhibit Mott conduction in low-temperature region
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: +38(044)525-62-92, fax: +38(044)525-74-63
Abstract. Heavily doped silicon diodes of n ++ -p + type which exhibit the Mott
temperature dependence of the forward current in a certain range of bias voltages and
low temperatures have studied from the point of their use as temperature sensors. In the
region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop
across the diode during the passage of a constant current, T is the temperature)
reproduces the Mott law (with opposite sign in the exponent), and the temperature
sensitivity of such sensors after passing through a minimum (as the temperature is
lowered) increases again up to the values typical of room temperature.
Keywords: junction diode, temperature sensor, silicon, hopping conductivity, heavy
doping, strong compensation.
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