Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 044-047.

Characteristics of diode temperature sensors which exhibit Mott conduction in low-temperature region
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: +38(044)525-62-92, fax: +38(044)525-74-63

Abstract. Heavily doped silicon diodes of n ++ -p + type which exhibit the Mott temperature dependence of the forward current in a certain range of bias voltages and low temperatures have studied from the point of their use as temperature sensors. In the region of hopping conduction, the operating signal of diodes U (T) (U is a voltage drop across the diode during the passage of a constant current, T is the temperature) reproduces the Mott law (with opposite sign in the exponent), and the temperature sensitivity of such sensors after passing through a minimum (as the temperature is lowered) increases again up to the values typical of room temperature.

Keywords: junction diode, temperature sensor, silicon, hopping conductivity, heavy doping, strong compensation.

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