Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (3) P. 061-064 (2007).
DOI: https://doi.org/10.15407/spqeo10.03.061


References

1. M.K. Sheinkman, N.E. Korsunskaya, and S.S. Ostapenko, Ultrasound treatment as a new way for defect engineering in semiconductor materials and devices // Romanian Journal of Information Science and Technology 2, p. 173-187 (1999).
2. Ya.M. Olikh, R.K. Savkina, and O.I. Vlasenko, Acoustostimulated activation of bound defects in CdHgTe alloys // Semiconductors 33, p. 398-401 (1999)
https://doi.org/10.1134/1.1187701
Ya.M. Olikh, R.K. Savkina, and O.I. Vlasenko, Acoustodynamic transformation of the defect structure in Hg1-xCdxTe alloys // Semiconductor Physics, Quantum Electronics and Optoelectronics 3, p. 304-307 (2000).
3. R.K. Savkina and A.B. Smirnov, Temperature rise in crystals subjected to ultrasonic influence // Infrar. Phys. & Technology 46, p. 388-393 (2005).
https://doi.org/10.1016/j.infrared.2004.06.008
4. A. Dillenz, T. Zweschper, and G. Busse, Progress in ultrasound phase thermography // Proc. SPIE 4360, p. 574-579 (2001).
https://doi.org/10.1117/12.421042
5. R.K. Savkina and A.I. Vlasenko, Sonic-stimulated change of the charge carrier concentration in nCdxHg1-xTe alloys with different initial state of the defect structure // Phys. status solidi (b) 229, p. 275-278 (2002).
https://doi.org/10.1002/1521-3951(200201)229:1<275::AID-PSSB275>3.0.CO;2-G
6. K.A. Myslivets and Ya.M. Olikh // Fiz. Tverd. Tela 32, p. 2912 (1990) (in Russian) [Sov. Phys. Solid State 32, p. 1692 (1990)].
7. R.K. Savkina, A.B. Smirnov and F.F. Sizov, Effect of the high-frequency sonication on the charge carrier transport in LPE and MBE HgCdTe layers // Semicond. Sci. Technol. 22, p. 97-102 (2007).
https://doi.org/10.1088/0268-1242/22/2/016
8. J.P. Hirth and J. Lothe, Theory of Dislocations. McGraw-Hill, New York, 1967.
9. S.H. Shin, J.M. Arias, M. Zandian, J.G. Pasko, and R.E. DeWames, Effect of the dislocation density on minority-carrier lifetime in molecular beam epitaxial HgCdTe // Appl. Phys. Lett. 59, p. 2718- 2720 (1991).
https://doi.org/10.1063/1.105895
10. S.M. Johnson, D.R. Rhiger, J.P. Rosbeck et al., Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors // J. Vac. Sci. Technology 10, p. 1499-1506 (1992).
https://doi.org/10.1116/1.586278
11. R.L. List, Formation and electrical effects of process induced dislocations in HgCdTe // J. Vac. Sci. Technology 10, p. 1651-1657 (1992).
https://doi.org/10.1116/1.586263
12. P.O. Renault, J.F. Barbot, P. Giault et al. // J. Phys. III France 5, p. 1383 (1995).
https://doi.org/10.1051/jp3:1995198
13. J.P. Hirth and H. Ehrenreich, Charged dislocations and jogs in Hg1-хCdхTe and other II-VI compounds // J. Vac. Sci. Technology 5, p. 367-372 (1983).
https://doi.org/10.1116/1.573222
14. S.M. Ryvkin, Photoelectric phenomena in semiconductors. Fizmatgiz, Moscow, 1963 (in Russian).
15. A.V. Lubchenko, E.A. Sal'kov, and F.F. Sizov, Physical properties of the semiconductor infrared photoelectronics. Naukova Dumka, Kyiv, 1984 (in Russian).