Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 061-064.

Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
R.K. Savkina, A.B. Smirnov, F.F. Sizov

V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine 41, prospect Nauky, 03028 Kyiv, Ukraine Phone: (044) 525-1813; fax: (044) 525 1810 E-mails:,,

Abstract. We have carried out a systematic study of mercury cadmium telluride crystals subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier transport parameters were determined from the Hall coefficient and conductivity measurements. Temperature dependences of the electron concentration without and during the ultrasonic load were calculated. A good agreement between the experimental and theoretical data was obtained. A model of internal source of the infrared radiation associated with a dislocation is proposed for the explanation of sonically stimulated effects in the semiconductor system. We have considered a possibility of the thermooptical excitation in Hg 1-x Cd x Te alloys during sonication, which can result in the nonequilibrium charge carrier generation and changes in electrical parameters of the material.

Keywords: Hg1-xCdxTe, ultrasound, dislocation.

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