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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 061-064.
Dislocations as internal sources of infrared radiation
in crystals subjected to ultrasonic influence
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: (044) 525-1813; fax: (044) 525 1810
E-mails: r_savkina@rambler.ru, alex_tenet@isp.kiev.ua, sizov@isp.kiev.ua
Abstract. We have carried out a systematic study of mercury cadmium telluride crystals
subjected to the high-frequency and high-intensity ultrasonic influence. The charge carrier
transport parameters were determined from the Hall coefficient and conductivity
measurements. Temperature dependences of the electron concentration without and during
the ultrasonic load were calculated. A good agreement between the experimental and
theoretical data was obtained. A model of internal source of the infrared radiation
associated with a dislocation is proposed for the explanation of sonically stimulated effects
in the semiconductor system. We have considered a possibility of the thermooptical
excitation in Hg 1-x Cd x Te alloys during sonication, which can result in the nonequilibrium
charge carrier generation and changes in electrical parameters of the material.
Keywords: Hg1-xCdxTe, ultrasound, dislocation.
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