Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (3) P. 070-074 (2007).
DOI: https://doi.org/10.15407/spqeo10.03.070


References

1. P.P. Moskvin, L.V. Rashkovets'kyi // Zhurnal Fiz. Khimii 80(9), p. 1568-1573 (2006) (in Russian).
2. P.P. Moskvin, V.V. Khodakovsky, L.V. Rashkovets'kyi // Semiconductor Physics, Quantum Electronics & Optoelectronics 9(3), p. 12-16 (2006).
https://doi.org/10.15407/spqeo9.03.012
3. P.P. Moskvin, V.V. Khodakovsky // Proc. of Confer. "FAGRAN-2006", Voronezh, 1, p. 380-383 (2006).
4. P.P. Moskvin, V.V. Khodakovsky // Proc. of Confer. "SEMST-2", Odessa, p. 122 (2006).
5. V.V. Kuznetsov, P.P. Moskvin, V.S. Sorokin // J. Crystal Growth 66(3), p. 562-575 (1984).
https://doi.org/10.1016/0022-0248(84)90155-6
6. V.V. Kuznetsov, P.P. Moskvin, V.S. Sorokin, Nonequilibrium Phenomenon at Liquid Heteroepitaxy of Semiconductor Solid Solutions. Мetallurgiya, Moscow, 1991 (in Russian).
7. R.D. Greenough, S.B. Palmer // J. Phys. D6, p. 587 (1973).
https://doi.org/10.1088/0022-3727/6/5/315
8. M.B. Small, R. Ghez // J. Appl. Phys. 50(8), 5322 (1979).
https://doi.org/10.1063/1.326630
9. P.P. Moskvin, V.V. Khodakovsky, L.V. Rashkovets'kyi // Proc. of Confer. "МЕТІТ-3", Kremenchug, p. 2 (2006).
10. R.A. Wood, R.J. Hager // Vac. Sci. Technol. A1(3), p. 1806-1810 (1983).
11. J. A. Mroczkowski, H. R. Vydyanath // J. Elektrochem. Soc. 128(3), p. 655-661 (1981).
https://doi.org/10.1149/1.2127331
12. C.C. Wang, S.H. Shin M. Chu, M. Lanir, A.H.B. Vanderwyck // J. Electrochem. Soc. 127(1), p. 175-179 (1980).
13. J.E. Bowers, J.L. Schmit, C.J. Speerschneider, R.B. Maciolek // IEEE Trans. Electron. Devices, ED27(1), p. 25 (1980).
https://doi.org/10.1109/T-ED.1980.19813
14. A. Lusson, R. Triboulet // J. Crystal Growth, 85, p. 503-509 (1987).
https://doi.org/10.1016/0022-0248(87)90483-0