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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 075-076.
Effect of the microwave radiation treatment
of porous indium phosphide on spectra
of radiative recombination centers
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-94-64; e-mail: re_rom@ukr.net
Abstract. To study the influence of microwave irradiation on a spectrum of defect states
in porous InP, we have measured the luminescence spectra within the range 0.50 to
2.04 eV at 77 K before and after short and long (up to 600 s) treatments in air in the
operation chamber of a magnetron at a frequency of 2.45 GHz and a surface power
density of 7.5 W/cm 2 . We have obtained that the spectra of defects in researched samples
are essentially changed as well as the concentrations of local centers. Possible mecha-
nisms of observable changes in the semiconductor impurity-defect composition caused
by a microwave treatment are discussed.
Keywords: luminescence, microwave treatment, spectrum of defects.
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