On the current flow mechanism in the Au-TiBx-n-GaN-i-Al2O3 Schottky barrier diodes
A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Klad'ko, R.V. Konakova, Ya.Ya. Kudruk, A.V. Kuchuk, V.V. Milenin, Yu.N. Sveshnikov, V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 001-005. Abstract | Full text (PDF)
Effect of laser radiation on catalytic properties of silicon electrodes covered with a transition metal film and providing water decomposition
V.E. Primachenko, L.L. Fedorenko, Yu.A. Tsyrkunov, S.A. Zinio, S.I. Kirillova, V.A. Chernobai, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 006-009. Abstract | Full text (PDF)
Electron energy spectrum in a spherical quantum dot with smooth confinement
V. Holovatsky, O. Voitsekhivska, V. Gutsul
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 010-016. Abstract | Full text (PDF)
Characteristics of the dependences of mobility and concentration of charge carriers in monocrystals CdSb(In) after γ-irradiation
A.V. Fedosov, Y.V. Koval, L.V. Jashchinskij, O.V. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 017-018. Abstract | Full text (PDF)
Calculation of the spectra of characteristic electron losses in indium bromide
M.O. Kolinko, O.V. Bovgyra
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 019-022. Abstract | Full text (PDF)
On the problem of relaxation for radiation-induced optical effects in some ternary chalcogenide glasses
O.I. Shpotyuk, M.M. Vakiv, B. Butkiewicz, A.P. Kovalskiy, R.Ya. Golovchak
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 023-027. Abstract | Full text (PDF)
Local properties of impurity and defects investigated by high pressure spectroscopy
Marek Grinberg
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 028-029. Abstract | Full text (PDF)
Information conception of image perception at solid-state lighting
V.I. Osinsky
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 030-043. Abstract | Full text (PDF)
Characteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
V.L. Borblik, Yu.M. Shwarts, M.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 044-047. Abstract | Full text (PDF)
Polarized optical transmittance spectra of nonlinear thiogallate crystals near "isotropic point"
O.S. Kushnir, O.S. Dzendzelyuk, and V.A. Hrabovskyy
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 048-050. Abstract | Full text (PDF)
Electron, hole, and exciton spectra in a quantum wire crossing the quantum well
O.M. Makhanets, A.M. Gryschuk, M.V. Tkach
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 051-057. Abstract | Full text (PDF)
Optical investigation of the electronic structure of alloys Cu-Fe
V.V. Vovchenko, V.S. Staschuk, L.V. Poperenko, V.O. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 058-060. Abstract | Full text (PDF)
Dislocations as internal sources of infrared radiation in crystals subjected to ultrasonic influence
haracteristics of diode temperature sensors which exhibit Mott conduction in low temperature region
R.K. Savkina, A.B. Smirnov, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 061-064. Abstract | Full text (PDF)
Obtaining and optical properties of the glasses of the GeS2-HgS system
B.D. Nechyporuk, I.D. Olekseyuk, V.O. Yukhymchuk, V.V. Filonenko, I.I. Mazurets, O.V. Parasyuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 065-069. Abstract | Full text (PDF)
Influence of elastic strains on LPE growth kinetics in the Cd-Hg-Te System
P.P. Moskvin, L.V. Rashkovetsky, V.V. Khodakovsky
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 070-074. Abstract | Full text (PDF)
Effect of the microwave radiation treatment of porous indium phosphide on spectra of radiative recombination centers
R. Red'ko, S. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 075-076. Abstract | Full text (PDF)
Compensation of hole conductivity in CdTe crystals doped with Cr
E.S. Nikonyuk, Z.I. Zakharuk, M.I. Kuchma, M.O. Kovalets, A.I. Rarenko, I.M. Yuriychuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 077-079. Abstract | Full text (PDF)
Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
D.S. Moscal, L.L. Fedorenko, M.M. Yusupov, M.M. Golodenko
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 080-083. Abstract | Full text (PDF)
Dielectric characteristics of GaSe nanocrystals intercalated with hydrogen
V.M. Kaminskii, Z.D. Kovalyuk, V.V. Netyaga, and V.B. Boledzyuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 084-086. Abstract | Full text (PDF)
Thermofield Cr->Cr2+ recharging resulting in anomalous intensification of Cr2+ emission in ZnS:Cr thin-film electroluminescent structures
N.A. Vlasenko, P.F. Oleksenko, Z.L. Denisova, M.A. Mukhlyo, L.I. Veligura
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 087-090. Abstract | Full text (PDF)
Estimation on frequency characteristics of a photodiode determined by the motion of charge carriers in the region of volume charge on the surface generation of carriers
A.I. Danilyuk, Yu.G. Dobrovolskiy
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 091-094. Abstract | Full text (PDF)
Calculation of Fermi level location and point defect ensemble in CdTe single crystal and thin films
V.V. Kosyak, A.S. Opanasyuk
Semiconductor physics, quantum electronics and optoelectronics. 2007. V.10, N.3. P. 095-102. Abstract | Full text (PDF)
