Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 077-079.
https://doi.org/10.15407/spqeo10.03.077

Compensation of hole conductivity in CdTe crystals doped with Cr
E.S. Nikonyuk1, Z.I. Zakharuk2, M.I. Kuchma1, M.O. Kovalets1, A.I. Rarenko2, I.M. Yuriychuk2

1National University of Water Management and Conservation 11, Soborna str., 35011 Rivne, Ukraine; phone: (0362)230420, e-mail: semirivne@mail.ru
2Chernivtsi National University 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine Phone: (0372)584875; e-mail: microel@chnu.cv.ua

Abstract. We present the results of optical and electrophysical investigations of CdTe:Cr crystals. A model explaining a considerable shift of the fundamental absorbtion edge in the crystals into the long-wave region is proposed. It is found that the doping of cadmium telluride crystals with Cr impurity leads to the introduction of deep donors with Еv + 0.19…0.32 eV.

Keywords: CdTe, chromium, doping, mobility, Hall effect, electrical conductivity, optical transmission.

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