Semiconductor Physics, Quantum Electronics and Optoelectronics, 10 (3) P. 080-083 (2007).
DOI: https://doi.org/10.15407/spqeo10.03.080

References

1. P.V. Santos, A.R Zanatta., U. Jahn, A. Trampert, F. Dondeo, I.J. Chambouleyron, Laser interference structuring of α -Ge films on GaAs // Appl.Phys. 91 (5), p. 2916-2920 (2002).
https://doi.org/10.1063/1.1448674
2. M.K. Kelly, J. Rogg, C.E. Nebel, M. Stutzmann, Sz. Kátai, High-resolution thermal processing of semiconductors using pulsed-laser interference pattering // Phys. status solidi (a), 166 (2), p. 651- 657 (1998).
https://doi.org/10.1002/(SICI)1521-396X(199804)166:2<651::AID-PSSA651>3.3.CO;2-G
3. S.V. Vintsents, A.V. Zaitseva, V.B. Zaitsev, Genesis of nanoscale defects and damage in GaAs under the multi-pulse quasistatic photodeformations of the micron-sized areas of semiconductor // Fizika Tekhnika Poluprov. 38 (3), p. 257-264 (2004) (in Russian).
https://doi.org/10.1134/1.1682319
4. V.A. Volodin, E.I. Gatskevich, A.V. Dvurechenskiy, M.D. Efremov, G.D. Ivlev, A.I. Nikiforov, D.A. Orehov, A.I. Yakimov, Modification of nanocluster of Ge in Si under action of pulse laser radiation // Ibid. 37 (11), p. 1352-1357 (2003).
5. V.D. Andreeva, M.I. Anisimov, N.G. Dgumamuhambetov, A.G. Dmitriev, Structure of the GaAs〈Te〉 crystals modified by the pulse laser radiation // Ibid. 24 (6), p. 1010-1013 (1990).
6. K. Sadra, Lateral resolution in laser-patterned thermal processing of GaAs // Appl. Surf. Sci. 125 (3-4), p. 325-331 (1998).
https://doi.org/10.1016/S0169-4332(97)00421-2
7. V.A. Nadtochiy, V.P. Alehin, Microplasticity in Ge single crystals subjected to laser irradiation and deformation of compression // Fizika Khimiya Obrabotki Mater. 4, p. 27-32 (2004) (in Russian).
8. Z.Yu. Gotra, Technology of Microelectronic Devices: Reference Book. Radio i Svyaz, Moscow (1991) (in Russian).
9. D. Moskal, V. Nadtochy, M. Golodenko, Formation of a periodic structure in GaAs near-surface layer by a laser beam with a diffraction modulated intensity // Functional Materials 13 (2007) (to be published).
10. M. Born, E.W. Wolf, Principles of Optics. Pergamon Press, Oxford, 1991.
11. V. Nadtochy, M. Golodenko, A. Kalimbet, D. Moskal, Structure changes caused by the laser pulse in Ge subsurface layer // Fizika Khimiya Tverd. Tela 4 (3), p. 556-559 (2003) (in Russian).
12. J.F. Nye, Physical Properties of Crystals. Their Representation by Tensors and Matrices. Clarendon Press, Oxford, 1964.
13. J. Hirth, J. Lothe, Theory of Dislocations. McGraw-Hill, New York, 1968.
14. Zhu Le-yi, Huang, Xin-fan, Wang Li, et al., Fabrication of nc-Si array made by pulsed laser constrained interference crystallisation // Chen Kun-ji. Weinadianzijishu=Micronanoelectron. Technol. 39 (7), p. 17-20 (2002).