Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 080-083.
Periodic subsurface structures in GaAs formed
by spatially modulated nanosecond pulse laser irradiation
1Slovyansk State Pedagogical University, 19, General Batyuk str., 84116 Slovyansk, Ukraine
Phone: +380 (06266) 5-06-84; fax: +380 (06262) 9-19-50; e-mail: dsmosk@mail.ru
Abstract. We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching. Keywords: laser, diffraction, intensity modulation, GaAs, thermoelastic stress, subsurface layer, point defect, islet structure.
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