Semiconductor Physics, Quantum Electronics & Optoelectronics. 2007. V. 10, N 3. P. 080-083.

Periodic subsurface structures in GaAs formed by spatially modulated nanosecond pulse laser irradiation
D.S. Moscal1, L.L. Fedorenko2, M.M. Yusupov2, M.M. Golodenko3

1Slovyansk State Pedagogical University, 19, General Batyuk str., 84116 Slovyansk, Ukraine Phone: +380 (06266) 5-06-84; fax: +380 (06262) 9-19-50; e-mail:
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine 45, prospect Nauky, 03028 Kyiv, Ukraine Phone: +380 (44) 525-64-77; fax: +380 (44) 525-43-82; e-mail:,
3Donbas National Academy of Civil Engineering and Architecture 2, Derzhavin str., Makiivka, 86123 Donbas region, Ukraine Phone: +380 (0622) 90-29-38, +380 (0623) 22-24-67 Fax: (06232) 4-46-82; e-mail:

Abstract. We used the method of nets to calculate the thermoelastic stresses on the GaAs surface caused by a non-destructive nanosecond pulse laser irradiation (λ = 0.532 µm) with diffraction spatial intensity modulation from a shield with rectangular cut. The structure of irradiated subsurface layers of samples was studied by the AFM method. A periodic islet structure formed in the process of diffusive redistribution of defects was revealed by the level-by-level chemical etching.

Keywords: laser, diffraction, intensity modulation, GaAs, thermoelastic stress, subsurface layer, point defect, islet structure.

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