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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 3. P. 226-229.
Magnetic susceptibility of p-Si(B) single crystals grown
in “vacancy” regime at presence of thermodonors created
by thermal treatments at 450 °C
1V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine,
41, prospect Nauky, 03028 Kyiv, Ukraine, e-mail: babich@isp.kiev.ua
Abstract. By using the Faraday method and complex of electro-physical studies (Hall
effect, ESR, etc.) the features of magnetic susceptibility (χ) of p-Si(B) crystals grown in
“vacancy” regime and annealed at 450 °C are studied. It is demonstrated that the
presence of deep thermodonors with the ionization energy Е і ≥ 200 meV in these samples
contributes to the appearance of a paramagnetic constituent with the magnetic
susceptibility (χ par ) even at 300 K. χ par in this material does not depend on temperature in
the range of 77 - 300 K that can testify on the Van-Fleck origin of this magnetic
susceptibility component. Absence of nonlinearities in the dependence χ(H) within the
interval 0.3-4 kOe shows uncooperative character of magnetism found out.
Keywords: diamagnetism, magnetic susceptibility, thermodonor, thermal treatment.
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