Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 11 N 3

Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers
N. Lukyanchikova, N. Garbar, V. Kudina, A. Smolanka, E. Simoen and C. Claeys
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 203-208.
Abstract | Full text (PDF)

Heat-resistant barrier and ohmic contacts based on TiBx and ZrBx interstitial phases to microwave diode structures
A.E. Belyaev, N.S. Boltovets, V.N. Ivanov, V.P. Kladko, R.V. Konakova, Ya.Ya. Kudryk, V.V. Milenin, V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 209-216.
Abstract | Full text (PDF)

Theoretical consideration of charge transport through the nanoindentor/GaAs junction
A. O. Kosogor, R. Nowak, D. Chrobak, V. A. L'vov
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 217-220.
Abstract | Full text (PDF)

Structural studies of iron doped B2O30.7PbO0.3Ag2O glasses by FT-IR and Raman spectroscopies
V. Timar, Raluca Lucacel-Ciceo, I. Ardelean
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 221-225.
Abstract | Full text (PDF)

Magnetic susceptibility of p-Si(B) single crystals grown in "vacancy" regime at presence of thermodonors created by thermal treatments at 450 C
V.. Babych, M.M. Luchkevych, Yu.V. Pavlovskyy, V.M. Tsmots
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 226-229.
Abstract | Full text (PDF)

Fluctuations of current, electroluminescence and acoustic emission in light-emitting 35 heterostructures
.I. Vlasenko, O.V. Lyashenko, P.F. Oleksenko, V.P. Veleschuk
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 230-235.
Abstract | Full text (PDF)

Optical and photoelectrical properties of the tetrathiotetracene-fullerene (TTTC60) film heterostructures
M.P. Gorishny, A.B. Verbitsky, A.V. Kovalchuk, T.N. Kovalchuk, P.N. Lutsyk
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 236-239.
Abstract | Full text (PDF)

Improvement of sensor response reproducibility and multistage recognition approach for samples with dominant components
I.V. Kruglenko
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 240-244.
Abstract | Full text (PDF)

Optical-electronic sensor of spacecraft heat protection ablation
G. Hornostaev
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 245-247.
Abstract | Full text (PDF)

Development of a KDP crystal growth system based on TRM and characterization of the grown crystals
S. Javidi, H. Faripour, M. Esmaeil Nia, K. F. Sepehri, N. Ali Akbari
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 248-251.
Abstract | Full text (PDF)

Investigations of surface morphology and chemical composition of Ag/ZnS/glassceramic thin-film structure
D. Kurbatov, A. Opanasyuk, V. Denisenko, A. Kramchenkov, M. Zaharets
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 252-256.
Abstract | Full text (PDF)

Thermoelectric studies of electronic properties of ferromagnetic GaMnAs layers
V. Osinniy, K. Dybko, A. Jedrzejczak, M. Arciszewska, W. Dobrowolski, T. Story, M.V. Radchenko, V.I. Sichkovskiy, G.V. Lashkarev, S.M. Olsthoorn, J. Sadowski
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 257-265.
Abstract | Full text (PDF)

Relaxation of silicon non-equilibrium depletion with majority charge carriers in strong electric fields, its mechanisms and ways to damp it
V.E. Primachenko, S.I. Kirillova and V.A. Chernobay
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 266-285.
Abstract | Full text (PDF)

Effect of the state of the surface layers on the strength of materials for optoelectronic and sensors devices
V.P. Maslov
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 286-291.
Abstract | Full text (PDF)

Optical properties of π-conjugated donor-acceptor systems with controlled hyperpolarizability
Yu.P. Piryatinski, .. Sevryukova
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 292-302.
Abstract | Full text (PDF)

Weighting method of the Fourier-kinoform synthesis
A. V. Kuzmenko
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 303-306.
Abstract | Full text (PDF)

Formation and activation of defects in films of AIVBVIcompounds in the process of growing from vapor phase
Ya.P. Saliy, .. Freik, V.V. Prokopiv (Jr)
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 307-310.
Abstract | Full text (PDF)

The theorem on the spin splitting of energy levels within the Kildal-Bodnar model
O.V. Dvornik and G.P. Chuiko
Semiconductor physics, quantum electronics and optoelectronics. 2008. V.11, N.3. P. 311-313.
Abstract | Full text (PDF)