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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2008. V. 11, N 3. P. 307-310.
Formation and activation of defects in films of AIVBVIcompounds
in the process of growing from vapor phase
Vasyl Stefanyk Precarpathian National University
57, Shevchenko str., 76000 Ivano-Frankivsk, Ukraine
Phone: +380(342) 50-37-52; e-mail: prk@tvnet.if.ua
Abstract. The work has suggested an adequate model describing formation of defects in
films of A IV B VI compounds in vapor-phase growth. Being based on this model, it has
given an analytical description of dependences for film electrophysical parameters
(concentrations n, p and mobilities µ n , µ p of free charge carriers) on technological factors
of film growth. We have calculated concentrations of activated and inactivated defects as
subject to temperature of film deposition. The developed model enables determination of
entropy and enthalpy of defect formation processes.
Keywords: defects, thin film, A IV B VI compounds, film growth.
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