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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 272-275.
Electron mobility in CdxHg1-xSe
Lviv Polytechnic National University, Semiconductor Electronics Department
12, Bandera str., Lviv 79013, Ukraine; e-mail: omalyk@mail.lviv.ua
Abstract. Electron scattering on the short-range potential caused by interaction with
polar and nonpolar optical phonons, piezoelectric and acoustic phonons, static strain,
ionized impurities in Cd x Hg 1-x Se (0 x 0.547) samples annealled in selenium vapour or
in dynamic vacuum are considered. Within the framework of the precise solution of the
stationary Boltzmann equation on the base of short-range principle, temperature
dependences of the electron mobility within the range 4.2 – 300 K are calculated. A good
coordination of the theory to experiment in the investigated temperature range is
established.
Keywords: cadmium-mercury-selenium solid solution, charge carrier scattering.
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