Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 276-279.
https://doi.org/10.15407/spqeo12.03.276


Peculiarities of neutron irradiation influence on GaP light-emitting structures
P. Litovchenko, A. Litovchenko, O. Konoreva, V. Opilat*, M. Pinkovska, V. Tartachnyk

Institute for Nuclear Researches, NAS of Ukraine, 47, prospect Nauky, 03028 Kyiv, Ukraine
*M. Drahomanov National Pedagogical University, 9, Pirohova str., 03023 Kyiv, Ukraine Corresponding author: phone+38(044)-525-39-97, +38(044)-525-37-49; e-mail: okskon@meta.ua

Abstract. GaP LEDs irradiated by reactor neutrons were studied by optical and electrical methods. The observed emission intensity degradation is related with two factors: 1) radiation fields that destroy bond excitons and 2) decrease in the free charge carrier concentration, which is caused by their capture by radiation defects. Study of current- voltage characteristics at 77 K by highly precession methods has revealed the appearance of N-shaped negative differential region caused by carrier tunneling onto deep levels in quantum wells, which might exist in initial and irradiated p-n structures. In some cases, improvement of current-voltage characteristics after neutron irradiation is observed. An assumption is made about the radiation-stimulated origin of this effect.

Keywords: GaP LEDs, irradiation, emission degradation, negative resistance, oscillation.

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