Semiconductor Physics, Quantum Electronics and Optoelectronics, 12 (3) P. 276-279 (2009).
DOI: https://doi.org/10.15407/spqeo12.03.276


References

1. A. Berg, P. Din. Light Emitting Diodes. Mir Publ., Moscow, 1979 (in Russian).
2. R.I. Hartman, B. Schwartz, M. Kuhn, Degradation and passivation of GaP light-emitting diodes // Appl. Phys. Lett. 18, p. 304-306 (1971).
https://doi.org/10.1063/1.1653674
3. A. Polity, T.N. Abgargan, R. Krause-Rohberg, Defects in electron irradiated GaP studied by positron lifetime spectroscopy // J. Appl. Phys. A 60, p. 541-544 (1995).
https://doi.org/10.1007/BF01538526
4. T. Kawakubo and M. Okada, Electrical and optical properties of neutron-irradiated GaP crystals // J. Appl. Phys. A 67, p. 3111-3114 (1990).
https://doi.org/10.1063/1.345387
5. A.H. Johnson, B.G. Rax, L.E. Selva, and C.E. Barnes, Proton degradation of light-emitting diodes // IEEE Trans. Nucl. Sci. 46, p. 1781-1789 (1999).
https://doi.org/10.1109/23.819154
6. P. Litovchenko, D. Bisello, A. Litovchenko, S. Kanevskyj, V. Opilat, M. Pinkovska, V. Tartachnyk, R. Rando, P. Giubilato, Some features of current-voltage characteristics of irradiated GaP light diodes // Nucl. Instrum. Meth. A 552, p. 93-97 (2005).
https://doi.org/10.1016/j.nima.2005.06.013
7. V.E. Kudrishov, K.G. Zolin, A.N. Turkin, A.E. Yunovich, A.N. Kovalev, F.I. Maniakhin, Tunnelling in light-emitting diodes based on InGaN/AlGaN/GaN heterostructures with quantum wells // Fizika i tekhnika poluprovodnikov 31, p. 1304-1309 (1997) (in Russian).
8. O.Yu. Borkovskaya, N.L. Dmytruk, V.G. Lytovhenko, O.N. Mishchuk, On the model of the effect of radiation-stimulated ordering in semiconductors A3 B5 // Fizika i tekhnika poluprovodnikov 23, No. 2, p. 207-212 (1989) (in Russian).