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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 302-308.
Parameters of the energy spectrum for holes in CuInSe2
1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine,
phone: +38 (03722) 46-877, e-mail: semicon-dpt@chnu.edu.ua
Abstract. This paper reports the coefficients B AC , for the k-linear term in dispersion
relation E(k) for holes of the upper valence bands
6 and
7 in p-CuInSe 2 crystals. We
also obtained the tensor components for the carrier effective masses
C B A m in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum
parameters for holes in CuInSe 2 allow successful explanation for the anisotropy of tensor
components describing the interband light absorption coefficient and the published data
for the temperature variation of the Hall coefficient, total Hall mobility and thermal
voltage within the temperature range 100 K ≤ T ≤ 350 K.
Keywords: chalcopyrite structure, СuInSe 2 , non-parabolic dispersion relation,
components of the effective mass tensor, kinetic coefficient, light absorption coefficient.
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