Semiconductor Physics, Quantum Electronics & Optoelectronics. 2009. V. 12, N 3. P. 302-308.
https://doi.org/10.15407/spqeo12.03.302


Parameters of the energy spectrum for holes in CuInSe2
P.М. Gorley1, I.V. Prokopenko2, О.О. Galochkinа1, P.P. Horley1,3, Yu.V. Vorobiev4, J. González-Hernández5

1Yu. Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., 58012 Chernivtsi, Ukraine, phone: +38 (03722) 46-877, e-mail: semicon-dpt@chnu.edu.ua
2V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine 3Centro de Física das Interacções Fundamentais (CFIF), Instituto Superior Técnico, Avenida Rovisco Pais, 1049-001 Lisboa, Portugal
4CINVESTAV-IPN Unidad Querétaro, Libramiento Norponiente 2000, Fracc. Real Juriquilla, 76230 Querétaro, México
5CIMAV, Miguel de Cervantes 120, Complejo Industrial Chihuahua, 31109 Chihuahua, México

Abstract. This paper reports the coefficients B AC , for the k-linear term in dispersion relation E(k) for holes of the upper valence bands  6 and  7 in p-CuInSe 2 crystals. We also obtained the tensor components for the carrier effective masses C B A m in all three valence sub-bands of the model semiconductor. It was shown that the energy spectrum parameters for holes in CuInSe 2 allow successful explanation for the anisotropy of tensor components describing the interband light absorption coefficient and the published data for the temperature variation of the Hall coefficient, total Hall mobility and thermal voltage within the temperature range 100 K ≤ T ≤ 350 K.

Keywords: chalcopyrite structure, СuInSe 2 , non-parabolic dispersion relation, components of the effective mass tensor, kinetic coefficient, light absorption coefficient.

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