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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2010. V. 13, N 3. P. 330-333.
Defect reorganization induced by pulsed magnetic field
in porous InP
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
41, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-94-64, 525-61-82; e-mail: re_rom@ukr.net
Abstract. We present results of investigations of the effect caused by weak magnetic
field (B = 60 mT) in porous InP crystals of impurity-defect composition. This effect was
found when studying the spectra of radiative recombination within the range 0.6 to
2.0 µm at 77 K. It was obtained that field influence initiates long-term changes in the
intensity of radiative recombination inherent to centers of different nature. A possible
mechanism of observed transformation is discussed.
Keywords: photoluminescence, weak magnetic field, impurity-defect composition.
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