References

Semiconductor Physics, Quantum Electronics and Optoelectronics, 13 (3) P. 330-333 (2010).
DOI: https://doi.org/10.15407/spqeo13.03.330

References

1. I.N. Arsentyev, A.B. Bobyl, S.G. Konnikov, et al., Porous nanostructured InP: technology, properties, application // Semiconductor Рhysics, Quantum Electronics and Optoelectronics 8, No.4, p. 95-104 (2005). https://doi.org/10.15407/spqeo8.04.095

2. R.B. Morgunov, Spin micromechanics in the physics of plasticity // Phys. Usp. 47, p. 125-147 (2004). https://doi.org/10.1070/PU2004v047n02ABEH001683

3. A.B. Georgobiani, I.M. Tiginyanu, Antisite defects in III-V compound // Fizika Tekhnika Poluprovodnikov 22, No.1, p. 3-14 (1988), in Russian.

4. N.V. Kukushkin, S.N. Postnikov, Yu.A. Terman, V.M. Kerdyakin, Changing of elastic-tension states of Si-SiO2 structures at pulsing magnetic field influent // Zhurnal Tekhnicheskoi Fiziki 55, No.10, p. 2083-2084 (1985), in Russian.

5. A.L. Buchachenko, R.Z. Sagdeev, K.M. Salikhov, Magnetic and Spin Phenomena in Chemical Reaction. Nauka, Moscow, 1978 (in Russian).

6. M.N. Levin, G.V. Semenova, A.V. Tatarintsev and O.N. Shumskaya, The effect of treatment in a pulsed magnetic field on the kinetics of oxidation of indium phosphide crystals // Technical Physics Letters 31, No.9, p. 762-764 (2005). https://doi.org/10.1134/1.2061739

7. I.B. Ermolovich, V.V. Milenin, R.V. Konakova, L.N. Primenko, I.V. Prokopenko and V.L. Gromashevskii, Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n+ -GaAs structures (M = Pt, Cr, W) // Semiconductors 31, No.4, p. 427-430 (1997). https://doi.org/10.1134/1.1187177

8. V.P. Alekhin, Physics of Strength and Plasticity of the Surface Layers of Materials. Nauka, Moscow, 1983 (in Russian).