Abstract. Studying the γ-irradiation influence on the properties of n-type germanium (n-Ge) within the interval of concentrations of the doping arsenic impurity has shown that the initial resistivity of single crystals with concentrations remains constant within the accuracy of measurements carried out. Only in weakly doped crystals (with and less), the used doses of γ-irradiation cause appreciable reduction both in the carrier concentration nc and their mobility μ.

Keywords: germanium, γ-irradiation, Hall effect, resistivity, electron concentration, charge carrier mobility.

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