Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)
Journal cover page

Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo




Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 14 N 3
DOI: https://doi.org/10.15407/spqeo14.03

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature
G.V. Lashkarev, V.I. Sichkovskyi, M.V. Radchenko, P. Aleshkevych, O.I. Dmitriev, P.E. Butorin, Z.D. Kovalyuk, R. Szymczak, A. Slawska-Waniewska, N. Nedelko, R. Yakiela, A.M. Balagurov, A.I. Beskrovnyy, W. Dobrowolski
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 263-268.
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Formation of silicon nanoclusters in buried ultra-thin oxide layers
O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, ≤.M. Khatsevich
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 269-272.
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Polarization conversion effect in obliquely deposited SiOx films
M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 273-278.
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Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals
I.P. Studenyak, V.Yu. Izai, V.ő. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 287-293.
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Changes in Hall parameters after -irradiation (60—Ó) of n-Ge
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 294-297.
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Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges
Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 298-301.
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Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 302-307.
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The role of copper in bifacial CdTe based solar cells
G. Khrypunov, A. Meriuts, T. Shelest, N. Deineko, N. Klyui, L. Avksentyeva, V. Gorbulik
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 308-312.
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Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films
K.V. Kostyukevych, R.V. Khristosenko, Yu.M. Shirshov, S.A. Kostyukevych, A.V. Samoylov, V.I. Kalchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 313-320.
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Method and estimation of parameters of dense part of electrical double layer at the interface electrode-solution of the dye in liquid crystal
O.V. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 321-324.
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Optical properties of the Ti surface structured by femtosecond laser beam
L. Dolgov, R. Kravchuk, A. Rybak, V. Kiisk, I. Sildos, I. Blonskyi
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 325-329.
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Sensors for fire gas detectors
V.R. Kozubovsky, V.V. Kormosh, I.P. Alyakshev, N.H. Lishchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 330-333.
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Effect of magnetic field on the reconstruction of the defect-impurity state and Ůathodoluminescence in Si/SiO2 structure
L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 334-338.
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Laser oscillation in Cr2+:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 339-343.
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Size effects in p-PbTe nanostructures on polyamide
D.M. Freik, I.K. Yurchyshyn, V.Yu. Potyak, Yu.V. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 344-349.
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The new approach to identification of film reflecting holographic marks
S.O. Kostyukevych , L.I. Muravsky, V.M. Fitio, T.I. Voronyak, P.E. Shepeliavyi, K.V. Kostyukevych, N.L. Moskalenko, V.I. Pogoda
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 350-356.
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Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 357-361.
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Photoconductivity and photoluminescence features of y-irradiated GaS0.75Se0.25 single crystals
T.B. Taghiyev
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 362-364.
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Jones-matrix images corresponding to networks of biological crystals for diagnostics and classification of their optical properties
Yu. O. Ushenko, V. O. Balanetska, O. P. Angelsky
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 365-374.
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Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 375-379.
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