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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 14 N 3
DOI: https://doi.org/10.15407/spqeo14.03

Diluted magnetic layered semiconductor InSe:Mn with high Curie temperature
G.V. Lashkarev, V.I. Sichkovskyi, M.V. Radchenko, P. Aleshkevych, O.I. Dmitriev, P.E. Butorin, Z.D. Kovalyuk, R. Szymczak, A. Slawska-Waniewska, N. Nedelko, R. Yakiela, A.M. Balagurov, A.I. Beskrovnyy, W. Dobrowolski
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 263-268.
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Formation of silicon nanoclusters in buried ultra-thin oxide layers
O.S. Oberemok, V.G. Litovchenko, D.V. Gamov, V.G. Popov, V.P. Melnik, O.Yo. Gudymenko, V.A. Nikirin, ▓.M. Khatsevich
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 269-272.
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Polarization conversion effect in obliquely deposited SiOx films
M.V. Sopinskyy, I.Z. Indutnyi, K.V. Michailovska, P.E. Shepeliavy, V.M. Tkach
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 273-278.
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Optical absorption edge and luminescence in phosphorous-implanted Cu6PS5X (X = I, Br) single crystals
I.P. Studenyak, V.Yu. Izai, V.╬. Stephanovich, V.V. Panko, P. Kus, A. Plecenik, M. Zahoran, J. Gregus, T. Roch
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 287-293.
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Changes in Hall parameters after -irradiation (60Đţ) of n-Ge
G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 294-297.
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Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges
Yu.G. Dobrovolskiy, V.L. Perevertailo, B.G. Shabashkevich
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 298-301.
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Characterization of quaternary chalcogenide As-Ge-Te-Si thin films
H.H. Amer, M. Elkordy, M. Zien, A. Dahshan, R.A. Elshamy
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 302-307.
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The role of copper in bifacial CdTe based solar cells
G. Khrypunov, A. Meriuts, T. Shelest, N. Deineko, N. Klyui, L. Avksentyeva, V. Gorbulik
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 308-312.
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Multi-element gas sensor based on surface plasmon resonance: recognition of alcohols by using calixarene films
K.V. Kostyukevych, R.V. Khristosenko, Yu.M. Shirshov, S.A. Kostyukevych, A.V. Samoylov, V.I. Kalchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 313-320.
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Method and estimation of parameters of dense part of electrical double layer at the interface electrode-solution of the dye in liquid crystal
O.V. Kovalchuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 321-324.
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Optical properties of the Ti surface structured by femtosecond laser beam
L. Dolgov, R. Kravchuk, A. Rybak, V. Kiisk, I. Sildos, I. Blonskyi
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 325-329.
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Sensors for fire gas detectors
V.R. Kozubovsky, V.V. Kormosh, I.P. Alyakshev, N.H. Lishchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 330-333.
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Effect of magnetic field on the reconstruction of the defect-impurity state and ˝athodoluminescence in Si/SiO2 structure
L.P. Steblenko, O.V. Koplak, I.I. Syvorotka, V.S. Kravchenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 334-338.
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Laser oscillation in Cr2+:ZnS waveguide thin-film structures under electrical pumping with impact excitation mechanism
N.A. Vlasenko, P.F. Oleksenko, M.O. Mukhlyo, P.M. Lytvyn, L.I. Veligura, Z.L. Denisova
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 339-343.
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Size effects in p-PbTe nanostructures on polyamide
D.M. Freik, I.K. Yurchyshyn, V.Yu. Potyak, Yu.V. Lysiuk
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 344-349.
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The new approach to identification of film reflecting holographic marks
S.O. Kostyukevych , L.I. Muravsky, V.M. Fitio, T.I. Voronyak, P.E. Shepeliavyi, K.V. Kostyukevych, N.L. Moskalenko, V.I. Pogoda
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 350-356.
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Influence of mutual drag of light and heavy holes on conductivity of p-silicon and p-germanium
I.I. Boiko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 357-361.
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Photoconductivity and photoluminescence features of y-irradiated GaS0.75Se0.25 single crystals
T.B. Taghiyev
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 362-364.
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Jones-matrix images corresponding to networks of biological crystals for diagnostics and classification of their optical properties
Yu. O. Ushenko, V. O. Balanetska, O. P. Angelsky
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 365-374.
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Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
Yu.M. Gudenko, V.V. Vainberg, V.M. Poroshin, V.M. Tulupenko
Semiconductor physics, quantum electronics and optoelectronics. 2011. V.14, N.3. P. 375-379.
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