Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 298-301.
DOI: https://doi.org/10.15407/spqeo14.03.298


Anti-reflection coatings based on SnO2, SiO2, Si3N4 films for photodiodes operating in ultraviolet and visible spectral ranges
Yu.G. Dobrovolskiy1, V.L. Perevertailo2, B.G. Shabashkevich1

1Scientific and developed firm “Tenzor” Ltd., Chernivtsi, Ukraine
2SE of SRI of Microdevices of “STC ISC”, NAS of Ukraine, Kyiv, Ukraine

Abstract. It is shown in this paper that tin dioxide coating is suitable to enhance sensitivity of photodiodes operating in the ultraviolet spectral range and based on zinc selenide and gallium phosphide. For these materials, the sensitivity values have been increased up to 0.12 and 0.2 A/W, respectively, in the maxima of their spectral characteristics. It is also shown that the film silicon nitride – silicon dioxide a bit better clarifies silicon photodiode, especially at the wavelength 700 nm. A gluing composition, in general, worsens transmission of films, and to greater extent transmission of the above film.

Keywords: anti-reflection coating, photodiode, ultraviolet, gallium phosphide, zinc selenide.

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