Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 334-338.
https://doi.org/10.15407/spqeo14.03.334



References 

1. V.S. Sokolov, N.A. Fedorovich, Mechanical stresses on the Si-SiO2 interface. Phys. Status Solidi (a), 99, No. 1, p. 151-158 (1987).
https://doi.org/10.1002/pssa.2210990118
 
2. M.V. Zamoryanskaya, V.I. Sokolov, Investigation of the structure of thermal oxide films on silicon by means of cathodoluminescence. Fizika Tverdogo Tela, 40, No. 11, p. 1984-1989 (1998), in Russian.
 
3. F. Maurice, L. Meny, R. Tixier, Microanalysis and scanning electron microscopy. Les Editions de Physique, 2, p. 527 (1978).
 
4. L.A. Bakaleynikov, M.V. Zamoryanskaya, E.V. Kolesnikov et al., Modification of silicon dioxide by electron beam. Fizika Tverdogo Tela, 46, No. 6, p. 989-994 (2004), in Russian.
https://doi.org/10.1134/1.1767236
 
5. V.N. Bogomolov, S.A. Gurevich, M.V. Zamoryanskaya et al., Formation of silicon nanoclusters in silicon substrate modification by electron beam. Fizika Tverdogo Tela, 43, No. 6, p. 357-359 (2001), in Russian.
 
6. A.P. Baraban, L.V. Miloglyadova, V.I. TerNersesyants, Effect of electric field on the charge state of ion-implanted silicon-silicon dioxide structures. Pis'ma Zhurnal Ekspiment. Teor. Fiziki, 27, No. 3, p. 89-94 (2001), in Russian.
 
7. V.V. Afrosimov, B. Ber, V.V. Zhurikhina et al., Mass transfer in thermal electric-field-induced modification of glassy metallic nanocomposites. Zhurnal Tekhnich Fiziki, 80, No. 11, p. 53-61 (2010), in Russian.
 
8. Yu.I. Golovin, R.B. Morgunov, Magnetoplastic effects in crystals. Izvestiya RAN. Ser. Fiz., 61, No. 5, p. 850-859 (1997), in Russian.
 
9. Yu.I. Golovin, R.B. Morgunov, A.A. Baskakov et al., Effect of magnetic field on plasticity, photoand electroluminescence of ZnS single crystals. Pis'ma Zhurnal Ekspiment. Teor. Fiziki, 69, No. 2, p. 114-118 (1999), in Russian.
 
10. R.B. Morgunov, Spin micromechanics in plasticity physics. Uspekhi Fiz. Nauk, 174, No. 2, p. 131-153 (2004), in Russian.
https://doi.org/10.3367/UFNr.0174.200402c.0131
 
11. M.N. Levin, B.A. Zon, Effect of pulsed magnetic fields on Cz-Si crystals. Zhurnal Ekspiment. Teor. Fiziki, 111, No. 4, p. 1373-1397 (1997), in Russian.
https://doi.org/10.1134/1.558209
 
12. A.R. Silin, A.N. Trukhin, Point Defects and Elementary Excitations in Crystalline and Glassy SiO2. Riga, Zinatne Publishers, 1985 (in Russian).
 
13. V.N. Bogomolov, Capillary phenomena in extremely thin zeolite channels and metal-dielectric interaction. Phys. Rev. B, 51, No. 23, p. 17040-17045 (1995).
https://doi.org/10.1103/PhysRevB.51.17040
 
14. A.N. Trukhin, A.E. Plaudis, A study of intrinsic luminescence of SiO2. Fizika Tverdogo Tela, 21, No. 4, p. 1109-1113 (1979), in Russian.
 
15. A.P. Baraban, D.V. Egorov, Yu.V. Petrov et al., Electroluminescence of SiO2 layers with excessive silicon. Pis'ma Zhurnal Tekhnich Fiziki, 30, No. 2, p. 1-5 (2004), in Russian.
 
16. V.S. Vavilov, V.F. Kiselev, B.N. Mukashev, Defects in Silicon and on its Surface. Moscow, Nauka Publishers, 1990 (in Russian).
 
17. A.P. Baraban, L.V. Miloglyadova, Defects and defect formation in oxide layer of ion-implanted structures of silicon – silicon dioxide. Zhurnal Tekhnich. Fiziki, 72, No. 5, p. 56-60 (2002).
 
18. V.A. Makara, M.A. Vasilyev, L.P. Steblenko et al., Magnetic-field-induced changes in the impurity state and microhardness of silicon crystals. Fizika Tekhnika Poluprovodnikov, 42, No. 9, p. 1061-1064 (2008), in Russian.
 
19. V.A. Makara, M.A. Vasilyev, L.P. Steblenko et al., Effect of magnetic treatment on microhardness and structure of silicon crystal near-surface layers. Fizika Khim. Tverdogo Tela, 10, No. 1, p. 193-199 (2009), in Russian.
 
20. T.S. Shamirzaev, A.M. Gilinskii, A.K. Bakarov et al., Long-term kinetics of photoluminescence of quantum dots in InAs/AlAs in magnetic field. Fizika Tekhnika Poluprovodnikov, (Russia), 39, No. 1, p. 35-37 (2005).