Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 334-338.
DOI: https://doi.org/10.15407/spqeo14.03.334

Effect of magnetic field on the reconstruction of the defect-impurity state and сathodoluminescence in Si/SiO2 structure
L.P. Steblenko1, O.V. Koplak2, I.I. Syvorotka3, V.S. Kravchenko1

1Taras Shevchenko Kyiv National University, Department of Physics, 64, Volodymyrs’ka str., 01601 Kyiv, Ukraine,
2Research and Training Center “Physical and Chemical Materials Science” under Taras Shevchenko Kyiv National University and NAS of Ukraine 64, Volodimirska str., 01033 Kyiv, Ukraine, е-mail: o.koplak@gmail.com
3Scientific Research Company “CARAT”, 202, Stryis’ka str., 79031 Lviv, Ukraine

Abstract. Impurity states in Si/SiO 2 structure have been studied using cathodoluminescence (CL). It has been found that intrinsic structure defects in Si/SiO 2 are sensitive to the action of magnetic field, which can be revealed due to changes in Si/SiO 2 optical properties. The most sensitive to magnetic field (about 35 per cent) is the intensity of the 1.9 eV CL band attributed to non-bridge oxygen atoms.

Keywords: silicon, defects, magnetic field, cathodoluminescence.

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