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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 357-361.
Influence of mutual drag of light and heavy holes
on conductivity of p-silicon and p-germanium
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine
45, prospect Nauky, 03028 Kyiv, Ukraine
E-mail: igorboiko@yandex.ru
Phone: +38 (044)236-5422
Abstract.
Conductivity of p-Si and p-Ge is considered for the two-band model with due
regard for mutual drag of light and heavy holes. It is shown that for small and moderate
temperatures this drag significantly diminishes the drift velocity of light holes and, as a
result, the whole conductivity of crystal. The drag effect considered here appears also in
the form of non-monotonous dependences of conductivity on temperature and carrier
concentration.
Keywords: silicon, germanium, balance equation, conductivity, drag.
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