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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 362-364.
Photoconductivity and photoluminescence features
of γ-irradiated GaS0.75Se0.25<Er> single crystals
Institute of Radiation Problems, Azerbaijan National Academy of Sciences,
9, F.Aqayev str., Baku-1143, Azerbaijan
Phone: +38(99412)398318; fax: +38(99412)398318; e-mail: t.b.tagiyev@rambler.ru
Abstract.
The effect of γ-radiation with Е = 1.3 MeV energy and D γ = 10…200 krad
dose on photoconductivity and photoluminescence features of GaS 0.75 Se 0.25 〈Er〉 single
crystals was studied. When analyzing the experimental data it was established that after
doping with the rare-earth element erbium and γ-radiation the
photoconductivity value and the intensity of photoluminescence radiation increased in
the investigated samples. A defect-formation model explaining the observed
characteristics was proposed.
Keywords: photoconductivity, photoluminescence, intensity, γ-irradiation, single crystal.
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