Semiconductor Physics, Quantum Electronics & Optoelectronics. 2011. V. 14, N 3. P. 375-379.
DOI: https://doi.org/10.15407/spqeo14.03.375

Lateral drift of photo-generated charge carriers in the p-SiGe/Si heterostructures with quantum wells
Yu.M. Gudenko1, V.V. Vainberg1, V.M. Poroshin1, V.M. Tulupenko2

1Institute of Physics, NAS of Ukraine, 03680 Kyiv, Ukraine Phone: 38(044)525-62-58, e-mail: gudenko@iop.kiev.ua
2Donbass State Engineering Academy, 72, Shkadinova str., 84313 Kramatorsk, Ukraine

Abstract. The drift of charge carriers in the p-Si 0.88 Ge 0.12 /Si heterostructures under strong lateral electric fields and conditions of carrier generation by the band-to-band light absorption has been investigated experimentally. The data of the drift length, drift mobility, and lifetime of charge carriers within the temperature range 20 to 77 K under the electric field up to 1500 V/cm are presented.

Keywords: silicon-based heterostructure, quantum well, lateral transport, strong electric field, photoconductivity.

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