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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 3. P. 281-284.
Reflection coefficient and optical conductivity of gallium nitride GaN
Department of Physics, University of Agriculture, P.M.B 2240, Abeokuta, Ogun State, Nigeria
*E-mail: johnsonak2000@yahoo.co.uk
Abstract. Here we report the reflection coefficient and optical conductivity of gallium nitride (GaN). The reflection coefficient obtained in the photon energy range 2–10 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the reflection coefficient has its highest value 0.54 at the photon energy 7.0 eV. Variation of the real part of optical conductivity with photon energy shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that the real part of optical conductivity has the maximum value 5.75•1015 for the photon energy 7.0 eV, and it decreases until coming to zero at 10.0 eV. The peaks indicate regions of deeper penetration of electromagnetic waves, and they also show high conductivity. The imaginary part of optical conductivity obtained for GaN in the photon energy range 2.0 to 10.0 eV shows five distinct peaks at photon energies 3.5, 5.0, 7.0, 8.0, and 9.0 eV. It was observed that it has a minimum value of –6.46•1015 for the photon energy 8.0 eV and a maximum value at –1.2•1015. This implies that there is a reduction in conductivity of GaN, and likewise, reduction in the propagation of electromagnetic waves in this region.
Keywords: reflection coefficient, optical conductivity, photon energy.
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