Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 21 N2 (2018)



Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)


 

Contents Volume 15 N 3 \
DOI: https://doi.org/10.15407/spqeo15.03

IR region challenges: Photon or thermal detectors? Outlook and means
F. Sizov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 193-199.
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Grating and plasmon resonances in the scattering of light by finite silver nanostrip gratings
O.V. Shapoval, R. Sauleau, A.I. Nosich
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 200-203.
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Resonance scattering and absorption of light by finite two-period gratings of circular silver nanowires
D.M. Natarov, R. Sauleau, A.I. Nosich
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 204-208.
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Complex source point concept in the modelling of dynamic control for optical beam deflection
N.K. Sakhnenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 209-213.
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Photoelectric properties of In2O3-InSe heterostructure with nanostructured oxide
V.M. Katerynchuk, Z.R. Kudrynskyi
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 214-217.
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Peculiarities of thermoannealing in n-Si and n-Ge crystals with oxygen impurity
P.I. Baranskii, G.P. Gaidar
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 218-222.
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Influence of the dispersion environment nature on photoluminescence properties of CdTe nanocrystals in colloidal solutions
O.A. Kapush, S.M. Kalytchuk, L.I. Trishchuk, V.M. Tomashyk, Z.F. Tomashyk, A.S. Kravtsova, D.V. Korbutyak, S.D. Boruk
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 223-226.
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Influence of cation substitution on electrical conductivity and optical absorption edge in Cu7(Ge1ĖxSix)S5I mixed crystals
I.P. Studenyak, M. Kranjcec, V.V. Bilanchuk, A. Dziaugys, J. Banys, A.F. Orliukas
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 227-231.
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SERS of Rhodamine 6G on substrates with laterally ordered and random gold nanoislands
V.O. Yukhymchuk, S.A. Kostyukevych, V.M. Dzhagan, A.G. Milekhin, E.E. Rodyakina, I.B. Yanchuk, P.Ye. Shepeliavy, M.Ya. Valakh, K.V. Kostyukevych, V.O. Lysiuk, I.V. Tverdokhlib
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 232-238.
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The factors influencing luminescent properties of ZnS:Mn obtained by the method of one-stage synthesis
Yu.Yu. Bacherikov, A.G. Zhuk, S.V. Optasyuk, O.B. Okhrimenko, K.D. Kardashov, S.V. Kozitskiy
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 239-246.
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Thermal state modeling in thermosensitive elements of microelectronic devices with reach-through foreign inclusions
V.I. Gavrysh
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 247-251.
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Fourier-Stokes polarimetry of fields corresponding to linearly and circularly polarized birefringent protein networks
A.O. Karachevtsev
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 252-260.
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Polarization correlometry of nets for characteristic states in Mueller-matrix patterns inherent to phase-inhomogeneous biological layers
O.Yu. Novakovsíka
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 261-267.
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Calculating the electronic transmission properties of semiconducting carbon nanotube Schottky diodes with increase in diameter
Rashid Nizam, S. Mahdi A. Rizvi and Ameer Azam
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 268-275.
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Complex index of refraction of indium nitride InN
J.O. Akinlami, F.M. Bolaji
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 276-280.
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Reflection coefficient and optical conductivity of gallium nitride GaN
J.O. Akinlami and I.O. Olateju
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 281-284.
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Electrophysical characteristics of large-size ?Si-Si(Li) detector heterostructures
R.A. Muminov, A.K. Saymbetov, Yo.K. Toshmurodov
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 285-287.
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Effect of magnetic field on hysteretic characteristics of silicon diodes under conditions of low-temperature impurity breakdown
A.B. Aleinikov, V.A. Berezovets, V.L. Borblik, M.M. Shwarts, Yu.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 288-293.
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Crystallization study of (As2S3)100-x(SbSI)x amorphous films by the optical method
V.M. Rubish, O.V. Kozusenok, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 294-297.
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Photoelectrical properties of nanoporous silicon
A.I. Luchenko, K.V. Svezhentsova, M.M. Melnichenko
Semiconductor physics, quantum electronics and optoelectronics. 2012. V.15, N.3. P. 298-301.
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