Semiconductor Physics, Quantum Electronics & Optoelectronics. 2012. V. 15, N 3. P. 294-297.
DOI: https://doi.org/10.15407/spqeo15.03.294

Crystallization study of (As2S3)100-x(SbSI)x amorphous films by the optical method
V.M. Rubish, O.V. Kozusenok*, P.P. Shtets, V.M. Marjan, E.V. Gera, A.A. Tarnaj

Uzhgorod Scientific-Technological Center of the Institute for Information Recording, NAS of Ukraine, 4, Zamkovi Skhody str., 88000 Uzhgorod, Ukraine, e-mail: center.uzh@gmail.com
*Uzhgorod National University,46, Pidhirna Str., 88000 Uzhgorod, Ukraine

Abstract. . The results of isothermal and nonisothermal crystallization investigations of the (As2S3)100-x(SbSI)x (53≤x≤80) thin films are given. It is shown that the films crystallization is accompanied by a sharp decrease in transmission. The phase structure arising in the matrix of films during crystallization corresponds to the structure of crystalline SbSI. The formation mechanism of nanocrystalline SbSI inclusions in the amorphous matrix is discussed.

Keywords: amorphous film, crystallization, transmission, structural transformation.

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