Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 3. P. 246-252.
DOI: https://doi.org/10.15407/spqeo16.03.246/

Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
І.M. Fodchuk1, I.I. Gutsuliak1, R.A. Zaplitniy1, S.V. Balovsyak1, І.P. Yaremiy2, О.Yu. Bonchyk3, G.V. Savitskiy3, І.M. Syvorotka4, P.M. Lytvyn5

1Yuriy Fedkovych Chernivtsi National University, 2, Kotsiubinskyi str., 58012 Chernivtsi, Ukraine
2V. Stefanyk Prykarpatskyi National University, 57, Shevchenko str. 76025 Ivano-Frankivsk, Ukraine
3Institute for Applied Problems of Mechanics and Mathematics, NAS of Ukraine, 3-b, Naukova str. 79601 Lviv, Ukraine
4Scientific Research Company “Carat”, 202, Stryiska str., 79031 Lviv, Ukraine
5V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prosp. Nauky, 03028 Kyiv, Ukraine

Abstract. The scattering field gradient maps of surface layer magnetic domains in Y2.95La0.05Fe5O12 iron-yttrium garnet modified by high-dose ion implantation with nitrogen ions N+ were obtained by the method of magnetic force microscopy. It was found that improving the magnetic properties of thin films, which includes reducing the observed magnetic losses after high-dose implantation, is accompanied by essential ordering of magnetic domains on the surface of the implanted films. There is a direct dependence of the magnetic properties on the dose of implanted atoms, accompanied by a significant dispersion and amorphization of surface layer and formation of a clear magnetic structure.

Keywords: iron-yttrium garnet, ferromagnetic resonance, epitaxial films, high-dose ion implantation, magnetic force microscopy.

Full Text (PDF)

Back to N3 Volume 16