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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 16 N 3
DOI: https://doi.org/10.15407/spqeo16.03

Light emission by point dipole located inside spherical (semiconductor) particle in the vicinity of a spherical metal particle
Yu.V. Kryuchenko and D.V. Korbutyak
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 227-239.
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Wannier–Stark electro-optical effect and photonic modes in 2D macroporous silicon structures with SiO2 nanocoatings
L. Karachevtseva, Yu. Goltviansky, O. Kolesnyk, O. Lytvynenko and O. Stronska
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 240-245.
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Magnetic force microscopy of YLaFeO films implanted by high dose of nitrogen ions
².M. Fodchuk, I.I. Gutsuliak, R.A. Zaplitniy, S.V. Balovsyak, ².P. Yaremiy, Î.Yu. Bonchyk, G.V. Savitskiy, ².M. Syvorotka, P.M. Lytvyn
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 246-252.
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Effect of magnetic nanoparticles with various geometrical shapes on morphology and dielectric properties of nanodispersions of nematic liquid crystal in polymer matrix
P. Kopcansky, M. Timko, Z. Mitrova, V. Zavisova, M. Koneracka, N. Tomasovicova, L. Tomco, O.V. Kovalchuk, V.M. Bykov, T.M. Kovalchuk, A.I. Lad
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 253-258.
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Raman scattering studies of composites based on Cu6PS5X (X = I, Br) superionic nanocrystals
I.P. Studenyak, M. Kranjcec, R.Yu. Buchuk, V.O. Stephanovich, S. Kokenyesi
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 259-264.
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X-ray diffraction investigation of GaN layers on Si(111) and Al2O3 (0001) substrates
N.V. Safriuk, G.V. Stanchu, A.V. Kuchuk, V.P. Kladko, A.E. Belyaev, V.F. Machulin
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 265-272.
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8H-, 10H-, 14H-SiC formation in 6H-3C silicon carbide phase transitions
S.I. Vlaskina, G.N. Mishinova, V.I. Vlaskin, V.E. Rodionov, G.S. Svechnikov
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 273-279.
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Effect of microwave treatment on current flow mechanism in ohmic contacts to GaN
V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 280-284.
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Radiation-resistant ultraviolet curable polyurethane films with CdSe-ZnS ñore-shell nanocrystals
N.R. Kulish, V.P. Kunets, K.Y. Narsingi, M.O. Manasreh, Vas. P. Kunets
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 285-288.
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Effect of microwave radiation on I?V curves and contact resistivity of ohmic contacts to n-GaN and n-AlN
A.E. Belyaev, N.S. Boltovets, Yu.V. Zhilyaev, V.S. Zhigunov, R.V. Konakova, V.N. Panteleev, A.V. Sachenko, V.N. Sheremet
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 289-292.
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On features of crystal structure of semiconductor-ferroelectric Ag3AsS3
N. Borovoy, Yu. Gololobov, G. Isaienko, A. Salnik
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 293-296.
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Use of radiation from PC screen for non-destructive controlling the internal strains in transparent parts
V.P. Maslov, N.V. Kachur
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 297-299.
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Revision of interface coupling in ultra-thin body silicon-on-insulator MOSFETs
T. Rudenko, A. Nazarov, V. Kilchytska, D. Flandre, V. Popov, M. Ilnitsky, and V. Lysenko
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 300-309.
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Contents
Semiconductor physics, quantum electronics and optoelectronics. 2013. V.16, N.3. P. 310
(PDF)