Semiconductor Physics, Quantum Electronics & Optoelectronics. 2013. V. 16, N 3. P. 293-296.
On features of crystal structure of semiconductor-ferroelectric Ag3AsS3
Abstract. The temperature dependences of the unit cell parameters a(T) and c(T) of Ag3AsS3 were measured by the X-ray dilatometry method with high precision within the temperature range 100 to 300 °K in the dark mode and under laser irradiation (λ = 532 nm). It was found that the parameter c increases almost linear with decreasing the temperature from 300 down to 100 K for samples in the dark. At the same time, for samples that were exposed during cooling to laser irradiation, the increase of the parameter с by the value Δc ≈ (0.002…0.003) Å is observed at temperatures Tp = 145…147 °K. This leap is typical for systems in which a phase transition of the first order occurs. Furthermore, there were investigated temperature dependences of the integral relative intensity I(T) of main structural maxima of Ag3AsS3 both in the dark mode and under laser irradiation. It was established the character of the dependence I(T) for these reflexes was changed significantly by laser irradiation. Keywords: proustite, unit cell parameters, phase transition, photoinduced effects, integral intensity.
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