Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 3. P. 256-259.
https://doi.org/10.15407/spqeo17.03.256

                                                                 

Photodiode based on epitaxial silicon with high sensitivity at the wavelength 54 nm
Yu. Dobrovolskyi 1,* , L. Pidkamin 1 , V. Brus 2 , V. Kuzenko 2

1Scientific and developed firm "Tensor" Ltd, 58013 Chernivtsi, Ukraine
2Bukovinian State Financial and Economics University, 58000 Chernivtsi, Ukraine
*Correspondence author phone: +38 (03722) 7-87-21; e-mail: yuriydrg@ukr.net

Abstract. A mathematical model of the construction of silicon photodiode based on epitaxial structure enabling to regulate the absorption edge of silicon in the long-wave spectral range is presented. The suggested model allows calculating the construction that possesses low sensitivity for the wavelengths larger than 600 nm and maximal values near the wavelength 254 nm.

Keywords:convolution, Fourier transform, permittivity, propagation constant.

Manuscript received 24.03.14; revised version received 29.07.14; accepted for publication 16.09.14; published online 30.09.14.

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