Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO)

Journal cover page

Semiconductor Physics,
  Quantum Electronics & 
     Optoelectronics
     SPQEO

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)
 DOI: https://doi.org/10.15407/spqeo



Semiconductor Physics, Quantum Electronics and Optoelectronics (SPQEO) is open access, free download peer-reviewed journal licensed under a Creative Commons Attribution-NoDerivatives 4.0 International License

Current Issue
Vol 22 N1 (2019)



Volume 22 (2019) Volume 21 (2018) Volume 20 (2017) Volume 19 (2016) Volume 18 (2015) Volume 17 (2014) Volume 16 (2013) Volume 15 (2012) Volume 14 (2011) Volume 13 (2010) Volume 12 (2009) Volume 11 (2008) Volume 10 (2007) Volume 09 (2006) Volume 08 (2005) Volume 07 (2004) Volume 06 (2003) Volume 05 (2002) Volume 04 (2001) Volume 03 (2000) Volume 02 (1999) Volume 01 (1998)

Contents Volume 17 N 3
DOI: https://doi.org/10.15407/spqeo17.03

Efficient core-SiO2/shell-Au nanostructures for surface enhanced Raman scattering
V.O. Yukhymchuk, O.M. Hreshchuk, M.Ya. Valakh, M.A. Skoryk, V.S. Efanov, N.A. Matveevskaya
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 217-221.
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Nucleation and growth kinetics of colloidal nanoparticles CdS:Mn in aqueous solution of polyvinyl alcohol
G.Yu. Rudko, V.I. Fediv, A.I. Savchuk, E.G. Gule, I.P. Vorona, V.V. Nosenko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 222-226.
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A model for non-thermal action of microwave radiation on oxide film/semiconductor structures
O.B. Okhrimenko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 227-231.
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Structural and optical studies of (Ag3AsS3)0.6(As2S3)0.4 thin films deposited at different technological conditions
I.P. Studenyak, Yu.Yu. Neimet, Y.Y. Rati, M.Yu. Buchuk, S. Kokenyesi, L. Daroci, R. Bohdan
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 232-236.
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Nanocrystalline Ge films created by thermal vacuum deposition on GaAs substrates: structural and electric properties
V.L. Borblik, A.A. Korchevoi, A.S. Nikolenko, V.V. Strelchuk, A.M. Fonkich, Yu.M. Shwarts, M.M. Shwarts
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 237-242.
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Free-volume correlations in positron-sensitive annihilation modes in chalcogenide vitreous semiconductors: on the path from illusions towards realistic physical description
O.I. Shpotyuk, M.M. Vakiv, M.V. Shpotyuk, A. Ingram, J. Filipecki, A.P. Vaskiv
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 243-251.
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A determination of propagation constants of symmetric planar waveguide modes in a frequency domain
V.M. Fitio, V.V. Romakh
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 252-255.
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Photodiode based on epitaxial silicon with high sensitivity at the wavelength 254 nm
Yu. Dobrovolskyi, L. Pidkamin, V. Brus, V. Kuzenko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 256-259.
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Pekar bipolaron and the virial theorem (arbitrary coupling)
N.I. Kashirina
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 260-267.
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Heterostructure ohmic contacts to p-CdTe polycrystalline films
A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 268-271.
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Influence of weak magnetic fields treatment on photoluminescence of GaAs
S.M. Red'ko
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 272-274.
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Optical and structural studies of phase transformations and composition fluctuations at annealing of Zn1-xCdxO films grown by dc magnetron sputtering
O. Kolomys, A. Romanyuk, V. Strelchuk, G. Lashkarev, O. Khyzhun, I. Timofeeva, V. Lazorenko, V. Khomyak
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 275-283.
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Optical and morphological properties of tetragonal Cu2ZnSnS4 thin films grown from sulphide precursors at lower temperatures
I.S. Babichuk, V.O. Yukhymchuk, M.O. Semenenko, N.I. Klyui, R. Caballero, O.M. Hreshchuk, I.S. Lemishko, I.V. Babichuk, V.O. Ganus, M. Leon
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 284-290.
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Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 291-294.
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Transformation of SiOx films into nanocomposite SiO2(Si) films under thermal and laser annealing
O.V. Steblova, A.A. Evtukh, O.L. Bratus', L.L. Fedorenko, M.V. Voitovych, O.S. Lytvyn, O.O. Gavrylyuk, O.Yu. Semchuk
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 295-300.
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The growth of weakly coupled graphene sheets from silicon carbide powder
V.S. Kiselov, P.M. Lytvyn, A.S. Nikolenko, V.V. Strelchuk, Yu.Yu. Stubrov, M.P. Tryus, A.E. Belyaev
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 301-307.
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Radiation-induced optical darkening and oxidation effects in As2S3 glass
T.S. Kavetskyy
Semiconductor physics, quantum electronics and optoelectronics. 2014. V.17, N.3. P. 308-312.
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Publication Ethics and Publication Malpractice Statement P.313. (PDF)

Contents P.315. (PDF)