Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 3. P. 272-274.
https://doi.org/10.15407/spqeo17.03.272

                                                                 

Influence of weak magnetic fields treatment on photoluminescence of GaAs
S.M. Red'ko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine
Phone: 38 (044) 525-94-64; e-mail: redko.fotya@gmail.com

Abstract. Long-term transformations in photoluminescence of GaAs single crystals treated with pulsed weak magnetic fields have been obtained. Treatments were performed in the multi-pulse (B = 60 mT, f = 10 Hz, τ = 1.2 ms, t = 5 min) regime. The defect structure transformations were inferred from the radiative recombination spectra within the range 0.6 to 2.5 μm at 300 and 77 K. A possible mechanism of the observed modifications related with electron-spin transformation is discussed.

Keywords:photoluminescence, weak magnetic field, impurity-defect composition.

Manuscript received 18.03.14; revised version received 31.07.14; accepted for publication 16.09.14; published online 30.09.14.

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