Semiconductor Physics, Quantum Electronics & Optoelectronics. 2014. V. 17, N 3. P. 291-294.
https://doi.org/10.15407/spqeo17.03.291

                                                                 

Conductivity type conversion in p-CdZnTe under pulsed laser irradiation
V.V. Tetyorkin, A.V. Sukach, N.M. Krolevec

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, Ukraine
Phone: 38 (044) 525-5461; e-mail: teterkin@isp.kiev.ua

Abstract. Laser-induced surface modification is investigated in p-Cd0.9Zn0.1Te under irradiation with nanosecond pulses of YAG:Nd laser by using the power density 5 MW/cm2. Conductivity type conversion of the near-surface region with the thickness of several micrometers is observed. The surface-barrier structures were prepared by electrolytic deposition of Au onto the irradiated surface. The spectral dependences of the photovoltaic response has been explained by formation of the graded band gap in the irradiated region. The direct current conductivity has been proved to be determined by the dislocation network.

Keywords: CdZnTe, laser irradiation, dislocations, conductivity type conversion.

Manuscript received 07.02.14; revised version received 08.07.14; accepted for publication 16.09.14; published online 30.09.14.

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