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Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 344-348.
Influence of Mg content on defect-related luminescence
of undoped and doped wurtzite MgZnO ceramics
V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 41, prospect Nauky, 03028 Kyiv, Ukraine; Phone: +38(044)525-7234; e-mail: stara_t@ukr.net Abstract. Undoped as well as Li-, Ag-, Cu- and Zn-doped MgxZn1–xO ceramics with x = 0–0.20 were sintered at 1000 °C. Defect-related photoluminescence (PL) and PL excitation spectra were measured at room temperature in 400–800 nm and 250–400 nm spectral ranges, accordingly. Two types of PL bands were observed: i) the bands, spectral positions of which were not influenced by the Mg content (Cu-related as well as self-activated orange and red ones); ii) the bands, spectral positions of which exhibited some blueshift with increasing Mg content (Li- and Ag-related and self-activated green ones). It has been shown that used doping gives the possibility to obtain the phosphor with intense visible emission within the blue-yellow spectral range. Keywords: MgZnO alloy, doping, photoluminescence.
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