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Semiconductor Physics,
  Quantum Electronics &
     Optoelectronics
     (SPQEO)

 ISSN 1605-6582 (On-line)  |  ISSN 1560-8034 (Print)  |  ISSN 1606-1365 (CD)









 

Contents Volume 18 N 3
DOI: https://doi.org/10.15407/spqeo18.03

Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging
G.V. Milenin
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 233-247.
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Annealing-induced formation of Sn2P2S6 crystallites in As2S3-based glass matrix
Yu.M. Azhniuk, A.V. Gomonnai, O.O. Gomonnai, S.M. Hasynets, F. Kovac, V.V. Lopushansky, I. Petryshynets, V.M. Rubish, D.R.T. Zahn
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 248-254.
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On the dielectric approximation in the additional light waves theory: an historical rehabilitation (recovery)
V.N. Piskovoi and E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 255-258.
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Peculiarities of the temperature dependences of silicon solar cells illuminated with light simulator
A.V. Sachenko, V.P. Kostylyov, R.M. Korkishko, M.R. Kulish, I.O. Sokolovskyi, V.M. Vlasiuk, D.V. Khomenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 259-266.
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Carrier transport mechanisms in reverse biased InSb p-n junctions
A.V. Sukach, V.V. Tetyorkin, A.I. Tkachuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 267-271.
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Plasmon-enhanced fluorometry based on gold nanostructure arrays. Method and device
V.I. Chegel, V.K. Lytvyn, A.M. Lopatynskyi, P.E. Shepeliavyi, O.S. Lytvyn, Yu.V. Goltvyanskyi
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 272-278.
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Optimization of the surface plasmon resonance minimum detection algorithm for improvement of method sensitivity
R.V. Khrystosenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 279-285.
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Effect of electron irradiation on transparent conductive films ZnO:Al deposited at different power sputtering
D.V. Myroniuk, A.I. Ievtushenko, G.V. Lashkarev, V.T. Maslyuk, I.I. Timofeeva, V.A. Baturin, O.Y. Karpenko, V.M. Kuznetsov, M.V. Dranchuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 286-291.
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Voids' layer structures in silicon irradiated with high doses of high-energy helium ions
M.I. Starchyk, L.S. Marchenko, M.B. Pinkovska, G.G. Shmatko, V.I. Varnina
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 292-296.
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Composition and concentration dependences of electron mobility in semi-metal Hg1-xCdxTe quantum wells
E.O. Melezhik, J.V. Gumenjuk-Sichevska, F.F. Sizov
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 297-301.
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Modeling spectral characteristics for creating smart lighting systems based on RGBW and WW LEDs
V.I. Kornaga, V.M. Sorokin, A.V. Rybalochka, O.S. Oliinyk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 302-308.
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Electroluminescence powdered ZnS:Cu obtained by one-stage synthesis
Yu.Yu. Bacherikov, A.G. Zhuk, O.B. Okhrimenko, D.L. Kardashov, S.V. Kozitskiy
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 309-311.
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Degradation of electrooptical characteristics of serial GaP light-emitting diodes, caused by fast electrons
O.V. Konoreva, M.V. Lytovchenko, Ye.V. Malyi, I.V. Petrenko, M.B. Pinkovska, V.P. Tartachnyk, V.V. Shlapatska
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 312-316.
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Ohmic contacts based on Pd to indium phosphide Gunn diodes
A.E. Belyaev, N.S. Boltovets, A.V. Bobyl, A.V. Zorenko, I.N. Arsentiev, V.P. Kladko, V.M. Kovtonyuk, R..V. Konakova, Ya.Ya. Kudryk, A.V. Sachenko, V.S. Slipokurov, A.S. Slepova, N.V. Safryuk, A.I. Gudymenko, V.V. Shynkarenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 317-323.
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Polarization memory of the luminescence related with Si nanoparticles embedded into oxide matrix
K.V. Michailovska, I.Z. Indutnyi, O.O. Kudryavtsev, M.V. Sopinskyy, P.E. Shepeliavyi
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 324-329.
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Modeling the process of removal aimed at cut traces on semiconductor wafers by using the method of contactless chemical-and-dynamical polishing
G.A. Pashchenko, M.Yu. Kravetskyi, A.V. Fomin
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 330-333.
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Determination of the spectral dependence for the absorption coefficient of phosphor inorganic microparticles
D.N. Khmil’, A.M. Kamuz, P.F. Oleksenko, V.G. Kamuz, N.G. Aleksenko, O.A. Kamuz
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 334-340.
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Design of optical components for terahertz/sub-terahertz imaging systems
A.V. Shevchik-Shekera, S.E. Dukhnin
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 341-343.
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Influence of Mg content on defect-related luminescence of undoped and doped wurtzite MgZnO ceramics
I.V. Markevich, T.R. Stara, V.O. Bondarenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 344-348.
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Analysis of the fundamental absorption edge of the films obtained from the C60 fullerene molecular beam in vacuum and effect of internal mechanical stresses on it
E.Yu. Kolyadina, L.A. Matveeva, P.L. Neluba, E.F. Venger
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 349-353.
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Theoretical and experimental study of Raman scattering in mixed (MoS2)x(MoSe2)1-x layered crystals
A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 354-361.
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Impedance anisotropy and quantum photocapacity of bio/inorganic clathrates InSe <histidine> and GaSe <histidine>
F.O. Ivashchyshyn, I.I. Grygorchak, M.I. Klapchuk
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 362-366.
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Superluminescent laser-integrated nanocarbonized matrix pumping of neodymium lasers YAG:Nd
Marat Onachenko
Semiconductor physics, quantum electronics and optoelectronics. 2015. V.18, N.3. P. 367-371.
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