Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015. V. 18, N 3. P. 354-361.
DOI: https://doi.org/10.15407/spqeo18.03.354

Theoretical and experimental study of Raman scattering in mixed (MoS2)x(MoSe2)1–x layered crystals
A.M. Yaremko, V.O. Yukhymchuk, Yu.A. Romanyuk, S.V. Virko

V. Lashkaryov Institute of Semiconductor Physics, NAS of Ukraine, 45, prospect Nauky, 03028 Kyiv, Ukraine

Abstract. Raman scattering in mixed MoS2/MoSe2 layer type crystals was investigated in this work. The change of intensities and positions of bands for in-plane E12g and out-of-plane A1g vibrations as functions of the “concentration” inherent to corresponding type layers has been studied. Estimation of interlayer interaction was obtained from comparison of experiment and theory, and effect of this interaction on the frequency of intralayer phonon was studied.

Keywords: Raman scattering, interlayer interaction, phonon, vibration, layered crystals.

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